Inventor · disambiguated record
Meng-Hsin Yeh
Also filed as: YEH MENG-HSIN
10 granted patents·2 pending applications·13 citations·filing 2010–2023
81Inventor score
Files withXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD7XIAMEN SANAN OPTOELECTRONICS CO LTD3QUANZHOU SANAN SEMICONDUCTOR TECH CO LTD1YEH MENG-HSIN1
Top patents by PatentIndex Score
12 records- 0176US8860044B2Nitride light-emitting diode with a current spreading layerYEH MENG-HSIN·Filed 2012·Granted Oct 14, 2014·6 cites·20 claims
- 0269US9705033B2LED with current spreading layer and fabrication methodXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2014·Granted Jul 11, 2017·2 cites·20 claims
- 0368US9324907B2Gallium-nitride-based light emitting diodes with multiple potential barriersXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2013·Granted Apr 26, 2016·3 cites·20 claims
- 0466US7955959B2Method for manufacturing GaN-based film LEDXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2010·Granted Jun 7, 2011·2 cites·11 claims
- 0564US11870010B2Light-emitting diodeXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2022·Granted Jan 9, 2024·0 cites·20 claims
- 0657US11296256B2Light-emitting diodeXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2020·Granted Apr 5, 2022·0 cites·20 claims
- 0754US2024145627A1Epitaxial structure of semiconductor light-emitting element, semiconductor light-emitting element, and light-emitting deviceQUANZHOU SANAN SEMICONDUCTOR TECH CO LTD·Filed 2023·Application pending·0 cites
- 0850US9312438B2Nitride light emitting diode and fabrication method thereofXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2015·Granted Apr 12, 2016·0 cites·12 claims
- 0947US11538960B2Epitaxial light emitting structure and light emitting diodeXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2020·Granted Dec 27, 2022·0 cites·18 claims
- 1046US9397253B2Light emitting diode and manufacturing method thereforXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2013·Granted Jul 19, 2016·0 cites·20 claims
- 1138US2016153119A1Epitaxial Structure and Growth Method of Group-III NitridesXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2016·Application pending·0 cites
- 1236US9570654B2Nitride light emitting diode and fabrication method thereofXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2015·Granted Feb 14, 2017·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →