Inventor · disambiguated record
Minoru Amano
Also filed as: AMANO MINORU
79 granted patents·11 pending applications·1,734 citations·filing 1977–2019
99Inventor score
Top patents by PatentIndex Score
90 records- 0199US8716817B2Magnetic memory element and nonvolatile memory deviceSAIDA DAISUKE·Filed 2012·Granted May 6, 2014·97 cites·20 claims
- 0298US9818464B2Magnetic memory element and memory deviceTOSHIBA KK·Filed 2016·Granted Nov 14, 2017·18 cites·13 claims
- 0398US9299918B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Mar 29, 2016·29 cites·11 claims
- 0497US9025368B2Magnetic memory element and nonvolatile memory deviceTOSHIBA KK·Filed 2014·Granted May 5, 2015·38 cites·20 claims
- 0597US8878317B2Magnetoresistive element and magnetic memoryDAIBOU TADAOMI·Filed 2011·Granted Nov 4, 2014·29 cites·11 claims
- 0697US8576616B2Magnetic element and nonvolatile memory deviceSAIDA DAISUKE·Filed 2011·Granted Nov 5, 2013·43 cites·20 claims
- 0797US8488375B2Magnetic recording element and nonvolatile memory deviceSAIDA DAISUKE·Filed 2011·Granted Jul 16, 2013·37 cites·20 claims
- 0896US8737122B2Nonvolatile memory deviceSAIDA DAISUKE·Filed 2012·Granted May 27, 2014·34 cites·19 claims
- 0996US8582355B2Magnetic memory element and nonvolatile memory deviceSAIDA DAISUKE·Filed 2012·Granted Nov 12, 2013·32 cites·20 claims
- 1096US8508979B2Magnetic recording element and nonvolatile memory deviceSAIDA DAISUKE·Filed 2011·Granted Aug 13, 2013·30 cites·20 claims
- 1196US6995962B2Ferromagnetic double tunnel junction element with asymmetric energy bandTOSHIBA KK·Filed 2004·Granted Feb 7, 2006·114 cites·24 claims
- 1296US6965138B2Magnetic memory device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Nov 15, 2005·59 cites·12 claims
- 1396US6765824B2Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memoryTOSHIBA KK·Filed 2003·Granted Jul 20, 2004·127 cites·20 claims
- 1496US6605836B2Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic informationTOSHIBA KK·Filed 2002·Granted Aug 12, 2003·64 cites·17 claims
- 1595US9508926B2Magnetoresistive effect element having an underlayer and a side wall layer that contain scandiumTOSHIBA KK·Filed 2015·Granted Nov 29, 2016·15 cites·20 claims
- 1695US8710605B2Magnetic memory and method of manufacturing the sameTAKAHASHI SHIGEKI·Filed 2011·Granted Apr 29, 2014·21 cites·13 claims
- 1795US8680632B2Magnetoresistive element and magnetic memoryDAIBOU TADAOMI·Filed 2011·Granted Mar 25, 2014·25 cites·19 claims
- 1894US8994131B2Magnetic memoryTOSHIBA KK·Filed 2013·Granted Mar 31, 2015·21 cites·19 claims
- 1994US6522573B2Solid-state magnetic memory using ferromagnetic tunnel junctionsTOSHIBA KK·Filed 2001·Granted Feb 18, 2003·89 cites·21 claims
- 2093US9647203B2Magnetoresistive element having a magnetic layer including OTOSHIBA KK·Filed 2014·Granted May 9, 2017·16 cites·19 claims
- 2193US8098514B2Magnetoresistive element and magnetic memoryNAGASE TOSHIHIKO·Filed 2008·Granted Jan 17, 2012·49 cites·24 claims
- 2293US6556473B2Magnetic memory with reduced write currentTOSHIBA KK·Filed 2001·Granted Apr 29, 2003·74 cites·24 claims
- 2392US6839206B2Ferromagnetic double tunnel junction element with asymmetric energy bandTOKYO SHIBAURA ELECTRIC CO·Filed 2002·Granted Jan 4, 2005·34 cites·23 claims
- 2492US6801414B2Tunnel magnetoresistance effect device, and a portable personal deviceTOSHIBA KK·Filed 2001·Granted Oct 5, 2004·41 cites·6 claims
- 2590US7291506B2Magnetic memory device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Nov 6, 2007·16 cites·19 claims
- 2689US9087980B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Jul 21, 2015·8 cites·19 claims
- 2789US8531875B2Magnetic memoryYANAGI SATOSHI·Filed 2012·Granted Sep 10, 2013·9 cites·9 claims
- 2887US9219227B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Dec 22, 2015·6 cites·20 claims
- 2987US6879475B2Magnetoresistive effect element having a ferromagnetic tunneling junction, magnetic memory, and magnetic headTOSHIBA KK·Filed 2002·Granted Apr 12, 2005·18 cites·31 claims
- 3087US6590803B2Magnetic memory deviceTOSHIBA KK·Filed 2002·Granted Jul 8, 2003·45 cites·20 claims
- 3186US9466350B2Magnetic memory deviceTOSHIBA KK·Filed 2015·Granted Oct 11, 2016·8 cites·18 claims
- 3286US7023725B2Magnetic memoryTOSHIBA KK·Filed 2004·Granted Apr 4, 2006·32 cites·40 claims
- 3386US6717845B2Magnetic memoryTOSHIBA KK·Filed 2003·Granted Apr 6, 2004·33 cites·27 claims
- 3485US8928055B2Magnetic memory elementSAIDA DAISUKE·Filed 2012·Granted Jan 6, 2015·9 cites·25 claims
- 3585US7038939B2Magneto-resistance effect element and magnetic memoryTOSHIBA KK·Filed 2003·Granted May 2, 2006·32 cites·12 claims
- 3685US6797536B2Magnetic memory device having yoke layer, and manufacturing methodTOSHIBA KK·Filed 2004·Granted Sep 28, 2004·29 cites·26 claims
- 3784US6960815B2Magnetic memory device having yoke layer, and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Nov 1, 2005·29 cites·55 claims
- 3883US6730949B2Magnetoresistance effect deviceTOSHIBA KK·Filed 2002·Granted May 4, 2004·32 cites·30 claims
- 3982US7692902B2Tunnel magnetoresistance effect device, and a portable personal deviceTOSHIBA KK·Filed 2008·Granted Apr 6, 2010·6 cites·16 claims
- 4082US6879515B2Magnetic memory device having yoke layerTOSHIBA KK·Filed 2004·Granted Apr 12, 2005·23 cites·20 claims
- 4182US6826078B2Magnetoresistive effect element and magnetic memory having the sameTOSHIBA KK·Filed 2003·Granted Nov 30, 2004·18 cites·12 claims
- 4280US8841139B2Magnetic memory and method of fabricating the sameKAMATA CHIKAYOSHI·Filed 2012·Granted Sep 23, 2014·4 cites·16 claims
- 4380US6707711B2Magnetic memory with reduced write currentTOSHIBA KK·Filed 2003·Granted Mar 16, 2004·22 cites·42 claims
- 4477US6927468B2Magnetic random access memoryTOSHIBA KK·Filed 2003·Granted Aug 9, 2005·24 cites·28 claims
- 4577US6900490B2Magnetic random access memoryTOSHIBA KK·Filed 2003·Granted May 31, 2005·25 cites·12 claims
- 4676US6868002B2Magnetic memory with reduced write currentTOSHIBA KK·Filed 2004·Granted Mar 15, 2005·12 cites·44 claims
- 4776US6765821B2Magnetic memoryTOKYO SHIBAURA ELECTRIC CO·Filed 2003·Granted Jul 20, 2004·19 cites·27 claims
- 4872US9166065B2Magnetoresistive effect element, magnetic memory, and magnetoresistive effect element manufacturing methodOHSAWA YUICHI·Filed 2012·Granted Oct 20, 2015·3 cites·13 claims
- 4972US7359163B2Tunnel magnetoresistance effect device, and a portable personal deviceTOSHIBA KK·Filed 2004·Granted Apr 15, 2008·9 cites·27 claims
- 5071US8848433B2Nonvolatile memory deviceTOSHIBA KK·Filed 2013·Granted Sep 30, 2014·4 cites·20 claims
Showing the top 50 of 90 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →