Inventor · disambiguated record
Mietek Bakowski
Also filed as: BAKOWSKI MIETEK
21 granted patents·3 pending applications·878 citations·filing 1996–2022
97Inventor score
Top patents by PatentIndex Score
24 records- 0194US5914500AJunction termination for SiC Schottky diodeABB RESEARCH LTD·Filed 1997·Granted Jun 22, 1999·139 cites·17 claims
- 0291US6091108ASemiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltageABB RESEARCH LTD·Filed 1997·Granted Jul 18, 2000·115 cites·17 claims
- 0388US6040237AFabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edgeABB RESEARCH LTD·Filed 1997·Granted Mar 21, 2000·89 cites·9 claims
- 0487US6104043ASchottky diode of SiC and a method for production thereofABB RESEARCH LTD·Filed 1997·Granted Aug 15, 2000·94 cites·10 claims
- 0582US5663580AOptically triggered semiconductor deviceABB RESEARCH LTD·Filed 1996·Granted Sep 2, 1997·68 cites·16 claims
- 0680US6002159ASiC semiconductor device comprising a pn junction with a voltage absorbing edgeABB RESEARCH LTD·Filed 1996·Granted Dec 14, 1999·54 cites·12 claims
- 0778US5932894ASiC semiconductor device comprising a pn junctionABB RESEARCH LTD·Filed 1997·Granted Aug 3, 1999·55 cites·16 claims
- 0876US5801836ADepletion region stopper for PN junction in silicon carbideABB RESEARCH LTD·Filed 1996·Granted Sep 1, 1998·47 cites·8 claims
- 0972US6313488B1Bipolar transistor having a low doped drift layer of crystalline SiCABB RESEARCH LTD·Filed 1999·Granted Nov 6, 2001·36 cites·17 claims
- 1068US6469359B2Semiconductor device and a method for production thereofABB REASEARCH LTD·Filed 2001·Granted Oct 22, 2002·16 cites·28 claims
- 1167US6670705B1Protective layer for a semiconductor deviceACREO AB·Filed 2000·Granted Dec 30, 2003·17 cites·34 claims
- 1264US7863656B2Semiconductor deviceCREE SWEDEN AB·Filed 2006·Granted Jan 4, 2011·3 cites·20 claims
- 1364US6150671ASemiconductor device having high channel mobility and a high breakdown voltage for high power applicationsABB RESEARCH LTD·Filed 1996·Granted Nov 21, 2000·24 cites·7 claims
- 1464US5831287ABipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiCABB RESEARCH LTD·Filed 1996·Granted Nov 3, 1998·27 cites·14 claims
- 1558US5923051AField controlled semiconductor device of SiC and a method for production thereofABB RESEARCH LTD·Filed 1997·Granted Jul 13, 1999·18 cites·10 claims
- 1657US5786251AMethod for producing a channel region layer in a voltage controlled semiconductor deviceABB RESEARCH LTD·Filed 1996·Granted Jul 28, 1998·18 cites·9 claims
- 1755US5773849AField of the inventionABB RESEARCH LTD·Filed 1996·Granted Jun 30, 1998·16 cites·14 claims
- 1853US5909039AInsulated gate bipolar transistor having a trenchABB RESEARCH LTD·Filed 1997·Granted Jun 1, 1999·15 cites·15 claims
- 1950US5902117APN-diode of SiC and a method for production thereofABB RESEARCH LTD·Filed 1997·Granted May 11, 1999·13 cites·15 claims
- 2048US2024321949A1Junction termination structureRISE RES INSTITUTES OF SWEDEN AB·Filed 2022·Application pending·0 cites
- 2146US6201280B1Transistor of SICABB RESEARCH LTD·Filed 1998·Granted Mar 13, 2001·10 cites·11 claims
- 2243US2015287818A1Semiconductor structureIND TECH RES INST·Filed 2014·Application pending·0 cites
- 2337US2002017647A1Junction termination for SiC schottky diodeFiled 2001·Application pending·0 cites
- 2435US5763902AInsulated gate bipolar transistor having a trench and a method for production thereofABB RESEARCH LTD·Filed 1996·Granted Jun 9, 1998·4 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →