Inventor · disambiguated record
Ming-Lung Cheng
Also filed as: CHENG MING · CHENG MING-LUNG
26 granted patents·15 pending applications·605 citations·filing 2010–2025
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD34CHINA TRIUMPH INT ENG CO LTD3TAIWAN SEMICONDUCTOR MFG3CHENG MING-LUNG1
Top patents by PatentIndex Score
41 records- 0196US8729627B2Strained channel integrated circuit devicesCHENG MING-LUNG·Filed 2010·Granted May 20, 2014·572 cites·19 claims
- 0294US12166071B2Dielectric fins with air gap and backside self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·2 cites·20 claims
- 0394US9768277B2Method and apparatus of forming an integrated circuit with a strained channel regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 19, 2017·9 cites·20 claims
- 0492US12154946B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·1 cites·20 claims
- 0589US11217679B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·2 cites·20 claims
- 0689US10522417B2FinFET device with different liners for PFET and NFET and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·4 cites·20 claims
- 0787US9105664B2Method for enhancing channel strainTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 11, 2015·6 cites·16 claims
- 0887US8357579B2Methods of forming integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 22, 2013·8 cites·20 claims
- 0984US11688767B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·1 cites·20 claims
- 1081US2025359255A1Epitaxial features in semiconductor devices and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1179US2024395902A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1279US2025040201A1Semiconductor device structure and method for forming the semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1376US2025311355A1Semiconductor Devices And Methods Of Fabricating The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1476US2025359170A1Multi-Gate Devices And Method Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1575US2025344475A1Semiconductor device structure with a cap layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1675US2025311303A1Isolation for Multigate DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1774US2025359151A1Source/Drain Structure with Bottom InsulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1874US2024379744A1Dielectric fins with air gap and backside self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1974US2024379816A1Multi-Channel Devices and Method with Anti-Punch Through ProcessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2074US2024379813A1Semiconductor Devices with Air Gaps and the Method ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2173US12142668B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 2272US11810827B2FinFET device with different liners for PFET and NFET and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 2370US12414331B2Isolation for multigate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 2469US12191370B2Semiconductor device with tunable channel layer usage and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 2568US12396234B2Method for forming semiconductor device structure with a cap layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 2668US2023387198A1Source/drain spacer with air gap in semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2768US2025331230A1Source/Drain Structure with Bottom InsulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2867US12324218B2Semiconductor devices with air gaps and the method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 3, 2025·0 cites·20 claims
- 2967US2025176215A1Semiconductor Device With Tunable Channel Layer Usage And Methods Of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3067US2023378320A1Epitaxial features in semiconductor devices and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3166US12389653B2Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 3266US12278276B2Multi-channel devices and method with anti-punch through processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 15, 2025·0 cites·20 claims
- 3364US11837631B2Source/drain spacer with air gap in semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 5, 2023·0 cites·20 claims
- 3462US12446261B2Multi-gate devices and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 3562US11688768B2Integrated circuit structure with source/drain spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 3660US11031299B2FinFET device with different liners for PFET and NFET and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·0 cites·20 claims
- 3756US11600695B2Dielectric fins with air gap and backside self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·0 cites·20 claims
- 3850US11505489B2Isothermal drop speed cooling method of forced convection area for lehr and the apparatus thereofCHINA TRIUMPH INT ENG CO LTD·Filed 2015·Granted Nov 22, 2022·0 cites·4 claims
- 3949US8951875B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 10, 2015·0 cites·16 claims
- 4046US12012297B2Avoidance conveying device and method for glass production lineCHINA TRIUMPH INT ENG CO LTD·Filed 2023·Granted Jun 18, 2024·0 cites·20 claims
- 4143US12459750B2Three-dimensional conveying device and method for plate glass production lineCHINA TRIUMPH INT ENG CO LTD·Filed 2021·Granted Nov 4, 2025·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →