Inventor · disambiguated record
Ming-Ching Chung
Also filed as: CHUNG MING-CHING
8 granted patents·5 pending applications·10 citations·filing 2015–2025
80Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD13
Top patents by PatentIndex Score
13 records- 0191US9947753B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 17, 2018·6 cites·15 claims
- 0287US10714576B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·3 cites·20 claims
- 0381US12507458B2Semiconductor device with dielectric spacer liner on source/drain contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 0472US2025300005A1Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0571US11670690B2Semiconductor device with dielectric spacer liner on source/drain contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
- 0671US2025323144A1Conductive structures and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0769US12341055B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 0864US12362273B2Conductive structures and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 0964US10147799B2Method of fabricating tantalum nitride barrier layer and semiconductor device thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 4, 2018·1 cites·20 claims
- 1056US2024392463A1Semiconductor electrochemical plating apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1155US2024355870A1Capacitor structure including a buffer layer and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1253US2024387379A1Method and apparatus for copper plating in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1352US11043573B2Method of fabricating tantalum nitride barrier layer and semiconductor device thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 22, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →