Inventor · disambiguated record
Michael W. Dennen
Also filed as: DENNEN MICHAEL W
10 granted patents·3 pending applications·550 citations·filing 1993–2011
93Inventor score
Top patents by PatentIndex Score
13 records- 0193US5885876AMethods of fabricating short channel fermi-threshold field effect transistors including drain field termination regionTHUNDERBIRD TECH INC·Filed 1997·Granted Mar 23, 1999·119 cites·7 claims
- 0292US6555872B1Trench gate fermi-threshold field effect transistorsTHUNDERBIRD TECH INC·Filed 2000·Granted Apr 29, 2003·73 cites·41 claims
- 0390US5438007AMethod of fabricating field effect transistor having polycrystalline silicon gate junctionTHUNDERBIRD TECH INC·Filed 1993·Granted Aug 1, 1995·75 cites·7 claims
- 0485US5698884AShort channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating sameTHUNDERBIRD TECH INC·Filed 1996·Granted Dec 16, 1997·58 cites·14 claims
- 0582US5371396AField effect transistor having polycrystalline silicon gate junctionTHUNDERBIRD TECH INC·Filed 1993·Granted Dec 6, 1994·45 cites·12 claims
- 0679US5786620AFermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating sameTHUNDERBIRD TECH INC·Filed 1996·Granted Jul 28, 1998·58 cites·29 claims
- 0769US5543654AContoured-tub fermi-threshold field effect transistor and method of forming sameTHUNDERBIRD TECH INC·Filed 1994·Granted Aug 6, 1996·46 cites·23 claims
- 0868US5374836AHigh current fermi threshold field effect transistorTHUNDERBIRD TECH INC·Filed 1993·Granted Dec 20, 1994·36 cites·146 claims
- 0960US5814869AShort channel fermi-threshold field effect transistorsTHUNDERBIRD TECH INC·Filed 1995·Granted Sep 29, 1998·26 cites·59 claims
- 1050US2010123206A1Methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricatedTHUNDERBIRD TECH INC·Filed 2009·Application pending·0 cites
- 1144US5367186ABounded tub fermi threshold field effect transistorTHUNDERBIRD TECH INC·Filed 1993·Granted Nov 22, 1994·14 cites·10 claims
- 1244US2012264283A1Methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricatedDENNEN MICHAEL W·Filed 2011·Application pending·0 cites
- 1329US2002036328A1Offset drain fermi-threshold field effect transistorsFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →