Inventor · disambiguated record
Mitsushi Fujiki
Also filed as: FUJIKI MITSUSHI
10 granted patents·9 pending applications·229 citations·filing 1998–2012
89Inventor score
Files withFUJITSU LTD13FUJITSU MICROELECTRONICS LTD2FUJITSU SEMICONDUCTOR LTD2SEIKO EPSON CORP1TAKAHASHI MAKOTO1
Top patents by PatentIndex Score
19 records- 0191US6194228B1Electronic device having perovskite-type oxide film, production thereof, and ferroelectric capacitorFUJITSU LTD·Filed 1998·Granted Feb 27, 2001·132 cites·45 claims
- 0288US7518173B2Semiconductor device having ferroelectric capacitor and its manufacture methodFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Apr 14, 2009·19 cites·6 claims
- 0381US6713808B2Semiconductor capacitor with diffusion prevention layerFUJITSU LTD·Filed 2002·Granted Mar 30, 2004·25 cites·25 claims
- 0475US6933156B2Semiconductor capacitor with diffusion prevention layerFUJITSU LTD·Filed 2004·Granted Aug 23, 2005·17 cites·7 claims
- 0573US6674633B2Process for producing a strontium ruthenium oxide protective layer on a top electrodeFUJITSU LTD·Filed 2001·Granted Jan 6, 2004·19 cites·8 claims
- 0668US6555864B1Ferroelectric capacitor having a PZT layer with an excess of PbFUJITSU LTD·Filed 2000·Granted Apr 29, 2003·10 cites·8 claims
- 0761US7892916B2Semiconductor device and fabricating method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Feb 22, 2011·2 cites·11 claims
- 0857US7211850B2Semiconductor device with specifically shaped contact holesFUJITSU LTD·Filed 2004·Granted May 1, 2007·5 cites·7 claims
- 0950US2007184595A1Semiconductor device and manufacturing method thereofFUJITSU LTD·Filed 2007·Application pending·0 cites
- 1049US8338249B2Semiconductor device and method for manufacturing the same having improved polarization reversal characteristicTAKAHASHI MAKOTO·Filed 2008·Granted Dec 25, 2012·0 cites·12 claims
- 1146US2013140614A1Semiconductor device and method for manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2012·Application pending·0 cites
- 1245US2008203530A1Semiconductor device and method of producing the sameFUJITSU LTD·Filed 2008·Application pending·0 cites
- 1344US2008057598A1Method for forming ferroelectric capacitor and method for fabricating semiconductor deviceFUJITSU LTD·Filed 2007·Application pending·0 cites
- 1440US7622346B2Method for forming ferroelectric capacitor and method for fabricating semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Nov 24, 2009·0 cites·18 claims
- 1540US2002190293A1Semiconductor device having a ferroelectric capacitorFUJITSU LTD·Filed 2002·Application pending·0 cites
- 1639US2007037298A1Semiconductor device with ferroelectric capacitor and fabrication method thereofSEIKO EPSON CORP·Filed 2006·Application pending·0 cites
- 1739US2007249065A1Manufacturing method of semiconductor deviceFUJITSU LTD·Filed 2006·Application pending·0 cites
- 1838US2007122917A1Forming method of ferroelectric capacitor and manufacturing method of semiconductor deviceFUJITSU LTD·Filed 2006·Application pending·0 cites
- 1934US2004185579A1Method of manufacturing semiconductor deviceFUJITSU LTD·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →