Inventor · disambiguated record
Mieno Fumitake
Also filed as: FUMITAKE MIENO
40 granted patents·3 pending applications·187 citations·filing 2004–2016
97Inventor score
Files withFUMITAKE MIENO15SEMICONDUCTOR MFG INT SHANGHAI15SEMICONDUCTOR MFG INT CORP6SEMICONDUCTOR MFG INT SHANGHAI CORP2HUANG HERB1
Top patents by PatentIndex Score
43 records- 0197US8883585B1Fin field-effect transistors and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Nov 11, 2014·32 cites·20 claims
- 0297US8809173B1Fin field-effect transistors and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Aug 19, 2014·33 cites·14 claims
- 0394US8518781B2Semiconductor device and manufacturing method thereofFUMITAKE MIENO·Filed 2012·Granted Aug 27, 2013·16 cites·11 claims
- 0491US9287387B2Static memory cell and formation method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted Mar 15, 2016·6 cites·17 claims
- 0590US8716764B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT CORP·Filed 2013·Granted May 6, 2014·8 cites·9 claims
- 0689US8871583B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT CORP·Filed 2012·Granted Oct 28, 2014·7 cites·9 claims
- 0788US9362331B2Method and system for image sensor and lens on a silicon back plane waferSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Jun 7, 2016·3 cites·19 claims
- 0886US9054193B2Fin field-effect transistorsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Jun 9, 2015·6 cites·19 claims
- 0984US9190331B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Nov 17, 2015·4 cites·14 claims
- 1084US8877575B2Complementary junction field effect transistor device and its gate-last fabrication methodSEMICONDUCTOR MFG INT CORP·Filed 2012·Granted Nov 4, 2014·7 cites·30 claims
- 1184US8114732B2Method for manufacturing twin bit structure cell with Al2O3/nano-crystalline Si layerFUMITAKE MIENO·Filed 2010·Granted Feb 14, 2012·8 cites·17 claims
- 1284US7625796B2Semiconductor device with amorphous silicon MONOS memory cell structure and method for manufacturing thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Dec 1, 2009·9 cites·18 claims
- 1381US8679950B2Manufacturing method for semiconductor device having side by side different finsFUMITAKE MIENO·Filed 2012·Granted Mar 25, 2014·6 cites·12 claims
- 1479US7892904B2Amorphous silicon MONOS or MAS memory cell structure with OTP functionSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted Feb 22, 2011·5 cites·19 claims
- 1578US9293550B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT CORP·Filed 2013·Granted Mar 22, 2016·4 cites·20 claims
- 1677US9853030B2Fin field effect transistorSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Dec 26, 2017·2 cites·9 claims
- 1777US9117906B2Fin field-effect transistors and fabrication method thereofSEMICONDUCTOR MFG INT CORP·Filed 2013·Granted Aug 25, 2015·4 cites·13 claims
- 1875US8860155B2Magnetic tunnel junction device and its fabricating methodMIN-HWA CHI·Filed 2012·Granted Oct 14, 2014·7 cites·20 claims
- 1975US8716080B2Semiconductor device manufacturing methodFUMITAKE MIENO·Filed 2012·Granted May 6, 2014·4 cites·18 claims
- 2069US8569757B2Semiconductor device with amorphous silicon MAS memory cell structure and manufacturing method thereofFUMITAKE MIENO·Filed 2011·Granted Oct 29, 2013·2 cites·13 claims
- 2166US9362286B2Fin field effect transistor and method for forming the sameSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Jun 7, 2016·1 cites·18 claims
- 2266US8749006B2Method and system for image sensor and lens on a silicon back plane waferHUANG HERB·Filed 2007·Granted Jun 10, 2014·1 cites·12 claims
- 2366US8748247B2Fin field-effect-transistor (FET) structure and manufacturing methodFUMITAKE MIENO·Filed 2012·Granted Jun 10, 2014·2 cites·20 claims
- 2461US8247864B2Amorphous silicon MONOS or MAS memory cell structure with OTP functionFUMITAKE MIENO·Filed 2011·Granted Aug 21, 2012·1 cites·16 claims
- 2559US9190330B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Nov 17, 2015·0 cites·14 claims
- 2659US9064804B2Method for manufacturing twin bit structure cell with silicon nitride layerFUMITAKE MIENO·Filed 2010·Granted Jun 23, 2015·1 cites·14 claims
- 2759US8546224B2Method for manufacturing twin bit structure cell with aluminum oxide layerFUMITAKE MIENO·Filed 2010·Granted Oct 1, 2013·1 cites·20 claims
- 2859US8143666B2Semiconductor device with amorphous silicon monos memory cell structure and method for manufacturing thereofFUMITAKE MIENO·Filed 2009·Granted Mar 27, 2012·1 cites·12 claims
- 2957US8975091B2Method of fabricating a magnetic tunnel junction deviceSEMICONDUCTOR MFG INT BEIJING·Filed 2014·Granted Mar 10, 2015·0 cites·17 claims
- 3056US8975642B2Transistor device and fabrication methodZHAO NEIL·Filed 2012·Granted Mar 10, 2015·1 cites·13 claims
- 3152US6967161B2Method and resulting structure for fabricating DRAM cell structure using oxide line spacerSEMICONDUCTOR MFG INT SHANGHAI·Filed 2004·Granted Nov 22, 2005·5 cites·19 claims
- 3251US9437597B2Static random access memory (SRAM) device with FinFET transistorsSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Sep 6, 2016·0 cites·5 claims
- 3348US9543390B2Transistor having a heterojunction and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2014·Granted Jan 10, 2017·0 cites·20 claims
- 3448US8487366B2TFT MONOS or SONOS memory cell structuresFUMITAKE MIENO·Filed 2011·Granted Jul 16, 2013·0 cites·12 claims
- 3547US7989363B2Method for rapid thermal treatment using high energy electromagnetic radiation of a semiconductor substrate for formation of dielectric filmsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted Aug 2, 2011·0 cites·18 claims
- 3646US9112020B2Transistor deviceSEMICONDUCTOR MFG INT CORP·Filed 2015·Granted Aug 18, 2015·0 cites·8 claims
- 3743US8753956B2Semiconductor structure and fabrication methodFUMITAKE MIENO·Filed 2012·Granted Jun 17, 2014·0 cites·20 claims
- 3843US8685826B2Method for manufacturing nano-crystalline silicon material from chloride chemistries for the semiconductor integrated circuitsFUMITAKE MIENO·Filed 2010·Granted Apr 1, 2014·0 cites·21 claims
- 3941US8748260B2Method for manufacturing nano-crystalline silicon material for semiconductor integrated circuitsFUMITAKE MIENO·Filed 2010·Granted Jun 10, 2014·0 cites·9 claims
- 4038US8598001B2Method for manufacturing twin bit structure cell with hafnium oxide and nano-crystalline silicon layerFUMITAKE MIENO·Filed 2010·Granted Dec 3, 2013·0 cites·19 claims
- 4137US2011140192A1Method for manufacturing twin bit structure cell with floating polysilicon layerSEMICONDUCTOR MFG INT SHANGHAI·Filed 2010·Application pending·0 cites
- 4237US2011156123A1Method for manufacturing twin bit structure cell with hafnium oxide layerSEMICONDUCTOR MFG INT SHANGHAI·Filed 2010·Application pending·0 cites
- 4336US2011095396A1Method and structure for silicon nanocrystal capacitor devices for integrated circuitsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →