Inventor · disambiguated record
Michael Hell
Also filed as: HELL MICHAEL
13 granted patents·17 pending applications·12 citations·filing 2019–2025
85Inventor score
Files withINFINEON TECHNOLOGIES AG30
Top patents by PatentIndex Score
30 records- 0197US11367775B1Shielding structure for SiC devicesINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jun 21, 2022·6 cites·21 claims
- 0290US11552173B2Silicon carbide device with trench gateINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·2 cites·26 claims
- 0383US10957768B1Silicon carbide device with an implantation tail compensation regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Mar 23, 2021·3 cites·20 claims
- 0482US12266694B2Silicon carbide device with a stripe-shaped trench gate structureINFINEON TECHNOLOGIES AG·Filed 2023·Granted Apr 1, 2025·0 cites·27 claims
- 0581US11552170B2Semiconductor device including current spread regionINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·1 cites·20 claims
- 0677US2025203986A1Silicon carbide device with a stripe-shaped trench gate structureINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0776US11888032B2Method of producing a silicon carbide device with a trench gateINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 30, 2024·0 cites·20 claims
- 0870US12176396B2Semiconductor device including current spread regionINFINEON TECHNOLOGIES AG·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 0970US2024145247A1Ion beam implantation method and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1068US12294018B2Vertical power semiconductor device including silicon carbide (sic) semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2024·Granted May 6, 2025·0 cites·18 claims
- 1168US11626477B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2021·Granted Apr 11, 2023·0 cites·23 claims
- 1262US11908694B2Ion beam implantation method and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 20, 2024·0 cites·20 claims
- 1362US2025056869A1Wide band gap semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1462US2025063775A1Semiconductor device having a superjunction-structureINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1561US2025015148A1Transistor deviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1660US11101343B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 1759US2025151324A1Vertical power semiconductor device including a sensor electrodeINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1859US2025107202A1Transistor DeviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1957US12119377B2SiC devices with shielding structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 15, 2024·0 cites·22 claims
- 2057US2025089343A1Power semiconductor device including silicon carbide (sic) semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2156US2024072122A1Semiconductor device and method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 2256US2024096988A1Semiconductor device and method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 2356US2024194778A1Semiconductor Device Having a Field Termination Structure and a Charge Balance Structure, and Method of Producing the Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 2455US2023163167A1Semiconductor device including a trench gate structureINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 2555US2025338550A1SEMICONDUCTOR DEVICE INCLUDING A SiC SEMICONDUCTOR BODYINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 2654US2025324714A1Silicon carbide device with trench gateINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 2753US11757031B2Power transistor with integrated Schottky diodeINFINEON TECHNOLOGIES AG·Filed 2020·Granted Sep 12, 2023·0 cites·20 claims
- 2853US2023006038A1Method for forming a drift region of a superjunction deviceINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 2952US2025246433A1Method of forming a wide band gap semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 3047US2025331262A1Semiconductor die and method of manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →