Inventor · disambiguated record
Michael Heuken
Also filed as: HEUKEN MICHAEL
7 granted patents·4 pending applications·137 citations·filing 1996–2011
86Inventor score
Top patents by PatentIndex Score
11 records- 0196US8217418B1Semi-polar semiconductor light emission devicesPAN SHAOHER X·Filed 2011·Granted Jul 10, 2012·29 cites·18 claims
- 0293US8624292B2Non-polar semiconductor light emission devicesPAN SHAOHER X·Filed 2011·Granted Jan 7, 2014·15 cites·25 claims
- 0390US7128785B2Method for depositing especially crystalline layers from the gas phase onto especially crystalline substratesAIXTRON AG·Filed 2003·Granted Oct 31, 2006·48 cites·20 claims
- 0481US6964876B2Method and device for depositing layersAIXTRON AG·Filed 2003·Granted Nov 15, 2005·21 cites·13 claims
- 0564US7135073B2Method and system for semiconductor crystal production with temperature managementAIXTRON AG·Filed 2001·Granted Nov 14, 2006·15 cites·19 claims
- 0649US7473316B1Method of growing nitrogenous semiconductor crystal materialsAIXTRON AG·Filed 2000·Granted Jan 6, 2009·3 cites·8 claims
- 0744US2005109281A1Process for coating a substrate, and apparatus for carrying out the processFiled 2004·Application pending·0 cites
- 0836US2004261704A1Method and device for monitoring a CVD-processFiled 2004·Application pending·0 cites
- 0934US2003070610A1Method and device for producing group III-N, group III-V-N and metal-nitrogen component structures on Si substratesFiled 2002·Application pending·0 cites
- 1029US2001014397A1Method for producing a wafer support, used, in particular, in a high-temperature CVD reactor or in a high-temperature CVD process which involves the use of aggressive gasesFiled 2000·Application pending·0 cites
- 1128US5772759AProcess for producing p-type doped layers, in particular, in II-VI semiconductorsAIXTRON GMBH·Filed 1996·Granted Jun 30, 1998·6 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →