Inventor · disambiguated record
Min-Hsiu Hung
Also filed as: HUNG Min-Hsiu
27 granted patents·10 pending applications·57 citations·filing 2016–2025
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD37
Top patents by PatentIndex Score
37 records- 0195US10847411B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·12 cites·20 claims
- 0295US9899258B1Metal liner overhang reduction and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·20 cites·20 claims
- 0392US11901183B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 0492US11107690B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·9 cites·20 claims
- 0591US11929314B2Interconnect structures including a fin structure and a metal capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·2 cites·20 claims
- 0689US10685842B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·4 cites·20 claims
- 0788US11011611B2Semiconductor device with low resistivity contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·2 cites·20 claims
- 0886US12512324B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 30, 2025·0 cites·20 claims
- 0986US2025357295A1Interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1084US11232945B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·1 cites·20 claims
- 1183US12400853B2Method of forming conductive feature including cleaning stepTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 1283US10658234B2Formation method of interconnection structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 19, 2020·4 cites·20 claims
- 1383US2025349616A1Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1482US11295956B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·1 cites·20 claims
- 1580US2025359291A1Contact plugs with reduced r/c and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1679US11955329B2Method of forming conductive feature including cleaning stepTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 1777US12087575B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 1877US11972951B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 1976US12394625B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 2076US2024387265A1Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2175US2025323044A1Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2275US2024170381A1Interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2373US12272600B2Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 2471US11670499B2Method of forming conductive feature including cleaning stepTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 2571US2024379423A1Barrier layer for an interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2671US2024413020A1Contact Plugs With Reduced R/C and the Methods of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2769US12237218B2Method of fabricating contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·15 claims
- 2868US11532503B2Conductive feature structure including a blocking regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 2967US2022376079A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3066US10804097B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·0 cites·20 claims
- 3165US2025167045A1Method of fabricating contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3261US10714334B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·0 cites·20 claims
- 3359US12308292B2Methods of forming semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 3456US10804140B2Interconnect formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 13, 2020·0 cites·21 claims
- 3554US10700177B2Semiconductor device with low resistivity contact structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·0 cites·20 claims
- 3652US11444173B2Semiconductor device structure with salicide layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 13, 2022·0 cites·20 claims
- 3746US11222818B2Formation method of semiconductor device structure with metal-semiconductor compound regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 11, 2022·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →