Inventor · disambiguated record
Mir Im
Also filed as: IM MIR
4 granted patents·10 pending applications·0 citations·filing 2021–2024
53Inventor score
Files withSK HYNIX INC14
Top patents by PatentIndex Score
14 records- 0168US2024249937A1Method of manufacturing semiconductor device by thermal treatment using laser lightSK HYNIX INC·Filed 2024·Application pending·0 cites
- 0264US11978626B2Method of treating target film and method of manufacturing semiconductor deviceSK HYNIX INC·Filed 2021·Granted May 7, 2024·0 cites·14 claims
- 0356US12317480B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 0454US2025024686A1Ferroelectric semiconductor device including memory cell having a three-dimensional structureSK HYNIX INC·Filed 2024·Application pending·0 cites
- 0552US12324142B2Semiconductor device including write transistor and read transistor having read word line and read bit line at opposite ends of read channel layerSK HYNIX INC·Filed 2022·Granted Jun 3, 2025·0 cites·27 claims
- 0650US2024105602A1Semiconductor device including connection portion between stacked structures and method of fabricating the sameSK HYNIX INC·Filed 2023·Application pending·0 cites
- 0747US12159662B2Semiconductor device including write transistor and read transistor disposed on a plane substantially parallel to substrateSK HYNIX INC·Filed 2022·Granted Dec 3, 2024·0 cites·15 claims
- 0846US2023413573A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2022·Application pending·0 cites
- 0944US2025344383A1Memory cell including electro-chemical memory element and semiconductor device including the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 1043US2023247840A1Semiconductor device including ferroelectric layer and method of manufacturing the sameSK HYNIX INC·Filed 2023·Application pending·0 cites
- 1143US2024008282A1Semiconductor device including oxide channel layer and ferroelectric layer and method of fabricating the sameSK HYNIX INC·Filed 2022·Application pending·0 cites
- 1243US2023260956A1Semiconductor device including joint portion between conductive connection structures and method of fabricating the sameSK HYNIX INC·Filed 2022·Application pending·0 cites
- 1342US2023292484A1Semiconductor device including write transistor and read transistorSK HYNIX INC·Filed 2022·Application pending·0 cites
- 1440US2023096911A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →