Inventor · disambiguated record

Min-Feng Kao

Also filed as: KAO MIN-FENG

136 granted patents·36 pending applications·508 citations·filing 2011–2025

99Inventor score

Technology areasH10W H10F H01L H10P H10D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD143 TAIWAN SEMICONDUCTOR MFG18 KAO MIN-FENG4 CHUANG CHUN-CHIEH2 CHEN SZU-YING1

Top patents by PatentIndex Score

172 records

0199US10276619B2Semiconductor device structure with a conductive feature passing through a passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·220 cites·20 claims
0298US10566288B2Structure for standard logic performance improvement having a back-side through-substrate-viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 18, 2020·20 cites·20 claims
0398US8736006B1Backside structure for a BSI image sensor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 27, 2014·31 cites·20 claims
0497US11942368B2Through silicon vias and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·3 cites·11 claims
0597US11404534B2Backside capacitor techniquesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·4 cites·20 claims
0697US11282769B2Oversized via as through-substrate-via (TSV) stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·4 cites·20 claims
0796US12315843B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·2 cites·20 claims
0896US11791332B2Stacked semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
0996US11756862B2Oversized via as through-substrate-via (TSV) stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·2 cites·20 claims
1096US10147682B2Structure for stacked logic performance improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 4, 2018·13 cites·20 claims
1195US11011567B2Structure and method for 3D image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·3 cites·20 claims
1294US11901387B2Image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
1393US11107767B2Structure for standard logic performance improvement having a back-side through-substrate-viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·6 cites·20 claims
1493US9312294B2Semiconductor devices, methods of manufacturing thereof, and image sensor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 12, 2016·6 cites·20 claims
1593US9305966B2Backside structure and method for BSI image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Apr 5, 2016·5 cites·20 claims
1693US8941204B2Apparatus and method for reducing cross talk in image sensorsLIN JENG-SHYAN·Filed 2012·Granted Jan 27, 2015·10 cites·20 claims
1793US8709854B2Backside structure and methods for BSI image sensorsCHUANG CHUN-CHIEH·Filed 2012·Granted Apr 29, 2014·14 cites·11 claims
1892US11756920B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·2 cites·20 claims
1992US10727205B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·6 cites·20 claims
2092US10510592B2Integrated circuit (IC) structure for high performance and functional densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·7 cites·20 claims
2192US8883544B2Method of forming an image deviceCHEN SZU-YING·Filed 2012·Granted Nov 11, 2014·5 cites·20 claims
2291US9666630B2Semiconductor devices, methods of manufacturing thereof, and image sensor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·5 cites·20 claims
2391US9293502B2Semiconductor switching device separated by device isolationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 22, 2016·4 cites·20 claims
2491US9287312B2Imaging sensor structure and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·7 cites·20 claims
2591US2025089387A1Methods for manufacturing semiconductor structure and back-side illuminated image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2690US11410972B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·2 cites·20 claims
2790US11322481B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
2890US9627430B2Method and apparatus for low resistance image sensor contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·3 cites·20 claims
2990US8669135B2System and method for fabricating a 3D image sensor structureKAO MIN-FENG·Filed 2012·Granted Mar 11, 2014·6 cites·20 claims
3089US11735617B2Semiconductor structure, back-side illuminated image sensor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·1 cites·20 claims
3189US11195818B2Backside contact for thermal displacement in a multi-wafer stacked integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·5 cites·20 claims
3289US10916502B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 9, 2021·4 cites·20 claims
3389US9373657B2System and method for fabricating a 3D image sensor structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 21, 2016·4 cites·20 claims
3488US12062679B2Backside structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 13, 2024·1 cites·20 claims
3588US11908878B2Image sensor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·1 cites·20 claims
3688US9059061B2Structure and method for 3D image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 16, 2015·3 cites·20 claims
3788US9006080B2Varied STI liners for isolation structures in image sensing devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 14, 2015·8 cites·20 claims
3888US8405182B2Back side illuminated image sensor with improved stress immunityCHOU KENG-YU·Filed 2011·Granted Mar 26, 2013·12 cites·20 claims
3988US2025338658A1Stacked structure for cmos image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4088US2025338660A1Backside structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4187US12183761B2Semiconductor structure, back-side illuminated image sensor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
4287US10283550B2Semiconductor structure, back-side illuminated image sensor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·3 cites·20 claims
4387US10157959B2Interconnect structure for stacked device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 18, 2018·3 cites·20 claims
4487US8969991B2Backside structure and methods for BSI image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 3, 2015·8 cites·20 claims
4587US8685820B2Multiple gate dielectric structures and methods of forming the sameTSENG HSIAO-HUI·Filed 2011·Granted Apr 1, 2014·8 cites·13 claims
4687US2025338659A1Csi with controllable isolation structure and methods of manufacturing and using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4786US2025318303A1Semiconductor device including image sensor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4885US12490538B2Stacked structure for CMOS image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 2, 2025·0 cites·20 claims
4985US11955428B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 9, 2024·1 cites·20 claims
5085US9865645B2Interconnect structure for stacked device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·3 cites·20 claims

Showing the top 50 of 172 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →