Inventor · disambiguated record
Mitsuo Kasori
Also filed as: KASORI MITSUO
21 granted patents·360 citations·filing 1985–2004
96Inventor score
Top patents by PatentIndex Score
21 records- 0183US4659611ACircuit substrate having high thermal conductivityTOSHIBA KK·Filed 1985·Granted Apr 21, 1987·64 cites·25 claims
- 0280US4847221AAlN sintered body having high thermal conductivity and a method of fabricating the sameTOSHIBA KK·Filed 1988·Granted Jul 11, 1989·30 cites·25 claims
- 0374US6790563B2Electric cellTOSHIBA KK·Filed 2001·Granted Sep 14, 2004·12 cites·17 claims
- 0469US6086990AHigh thermal conductivity silicon nitride circuit substrate and semiconductor device using the sameTOSHIBA KK·Filed 1996·Granted Jul 11, 2000·38 cites·8 claims
- 0566US5176309AMethod of manufacturing circuit boardTOSHIBA KK·Filed 1991·Granted Jan 5, 1993·31 cites·11 claims
- 0662US5286927AMethod of manufacturing circuit board and circuit board itself manufactured by said methodTOSHIBA KK·Filed 1992·Granted Feb 15, 1994·26 cites·9 claims
- 0762US5184399AMethod of manufacturing circuit boardTOSHIBA KK·Filed 1991·Granted Feb 9, 1993·27 cites·16 claims
- 0861US6107638ASilicon nitride circuit substrate and semiconductor device containing sameTOSHIBA KK·Filed 1998·Granted Aug 22, 2000·26 cites·9 claims
- 0960US5280850AMethod of manufacturing circuit boardTOSHIBA KK·Filed 1992·Granted Jan 25, 1994·24 cites·11 claims
- 1056US7455936B2Electric cellTOSHIBA KK·Filed 2004·Granted Nov 25, 2008·2 cites·6 claims
- 1155US7244528B2Aluminum negative electrode batteryTOSHIBA KK·Filed 2003·Granted Jul 17, 2007·2 cites·18 claims
- 1254US6110596ASilicon nitride ceramic circuit substrate and semiconductor device using the sameTOSHIBA KK·Filed 1996·Granted Aug 29, 2000·19 cites·18 claims
- 1349US5204080AMethod of manufacturing an aluminum nitride structureTOSHIBA KK·Filed 1990·Granted Apr 20, 1993·8 cites·5 claims
- 1446US5616956ACircuit substrate including insulating layer of aluminum nitride and electrically conductive layer of conductive component, aluminum nitride and other components, and semiconductor device containing sameTOSHIBA KK·Filed 1995·Granted Apr 1, 1997·14 cites·32 claims
- 1543US6013356ACircuit board with high strength and high reliability and process for preparing the sameTOSHIBA KK·Filed 1996·Granted Jan 11, 2000·11 cites·17 claims
- 1639US5284537AMethod of manufacturing aluminum nitride structure with anisotropic propertiesTOSHIBA KK·Filed 1992·Granted Feb 8, 1994·4 cites·6 claims
- 1738US5409869AAluminum nitride sintered body, method for manufacturing the same, and ceramic circuit boardTOSHIBA KK·Filed 1993·Granted Apr 25, 1995·8 cites·5 claims
- 1835US5641718ASintered aluminum nitride and circuit substrate using sintered aluminum nitrideTOSHIBA KK·Filed 1995·Granted Jun 24, 1997·6 cites·26 claims
- 1934US5500395AMethod for manufacturing an aluminum nitride sintered bodyTOSHIBA KK·Filed 1994·Granted Mar 19, 1996·5 cites·12 claims
- 2031US5182540AElectrical resistor element and method of manufacturing the sameTOSHIBA KK·Filed 1991·Granted Jan 26, 1993·2 cites·17 claims
- 2123US5126293ALight-shielding a delta n sintered body and method of manufacturing the sameKOSHIBA KK·Filed 1990·Granted Jun 30, 1992·1 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →