Inventor · disambiguated record
Minhyun Lee
Also filed as: LEE MINHYUN
53 granted patents·28 pending applications·46 citations·filing 2014–2025
97Inventor score
Top patents by PatentIndex Score
81 records- 0197US11588034B2Field effect transistor including gate insulating layer formed of two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 21, 2023·4 cites·26 claims
- 0295US10790356B2Semiconductor device including metal-2 dimensional material-semiconductor contactSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 29, 2020·7 cites·19 claims
- 0395US10684560B2Pellicle for photomask, reticle including the same, and exposure apparatus for lithographySAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·6 cites·28 claims
- 0492US11342414B2Semiconductor device including metal-2 dimensional material-semiconductor contactSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
- 0592US10217819B2Semiconductor device including metal-2 dimensional material-semiconductor contactSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 26, 2019·6 cites·16 claims
- 0690US12080649B2Semiconductor memory device and apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 3, 2024·1 cites·18 claims
- 0790US11798171B2Weakly supervised semantic segmentation device and method based on pseudo-masksUIF UNIV INDUSTRY FOUNDATION YONSEI UNIV·Filed 2021·Granted Oct 24, 2023·2 cites·13 claims
- 0890US10996556B2Pellicles for photomasks, reticles including the photomasks, and methods of manufacturing the pelliclesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 4, 2021·3 cites·27 claims
- 0988US11563116B2Vertical type transistor, inverter including the same, and vertical type semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 24, 2023·1 cites·40 claims
- 1088US11532709B2Field effect transistor including channel formed of 2D materialSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 20, 2022·1 cites·17 claims
- 1188US10559660B2Semiconductor device including metal-2 dimensional material-semiconductor contactSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 11, 2020·3 cites·14 claims
- 1287US12408399B2Semiconductor device including two-dimensional semiconductor materialSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 1383US11624127B2Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 11, 2023·1 cites·20 claims
- 1480US12255244B2Field effect transistor including gate insulating layer formed of two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 1579US12139814B2Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 1679US12062697B2Semiconductor device including two-dimensional semiconductor materialSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·14 claims
- 1779US12034049B2Superlattice structure including two-dimensional material and device including the superlattice structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 9, 2024·0 cites·20 claims
- 1879US9922825B2Electronics device having two-dimensional (2D) material layer and method of manufacturing the electronic device by inkjet printingSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 20, 2018·2 cites·15 claims
- 1978US12142697B2Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·19 claims
- 2078US12040360B2Semiconductor device including metal-2 dimensional material-semiconductor contactSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·16 claims
- 2178US2025066950A1Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2277US12356668B2Field effect transistor including channels having a hollow closed cross-sectional structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·19 claims
- 2377US10217513B2Phase change memory devices including two-dimensional material and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 26, 2019·4 cites·41 claims
- 2475US2025185339A1Field effect transistor including gate insulating layer formed of two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2575US2025201307A1Vertical nonvolatile memory device including memory cell stringSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2674US12268106B2Nonvolatile memory device and operating method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·11 claims
- 2774US11158849B2Lithium ion battery including nano-crystalline graphene electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 26, 2021·1 cites·10 claims
- 2874US2025366501A1Natural sauce, and method for preparing sameCJ CHEILJEDANG CORP·Filed 2022·Application pending·0 cites
- 2974US2025204290A1Nonvolatile memory device and operating method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3073US11703753B2Pellicles for photomasks, reticles including the photomasks, and methods of manufacturing the pelliclesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·31 claims
- 3172US12183679B2Interconnect structure and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·17 claims
- 3272US12087818B2Transistor including two-dimensional (2D) channelSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 3372US12027588B2Field effect transistor including channel formed of 2D materialSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·18 claims
- 3472US12002882B2Vertical type transistor, inverter including the same, and vertical type semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 4, 2024·0 cites·20 claims
- 3572US11575011B2Superlattice structure including two-dimensional material and device including the superlattice structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 3671US12272402B2Vertical nonvolatile memory device including memory cell stringSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·24 claims
- 3770US11508815B2Semiconductor device including two-dimensional semiconductor materialSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·15 claims
- 3869US11985910B2Memristor and neuromorphic device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 14, 2024·0 cites·21 claims
- 3969US11508814B2Transistor including two-dimensional (2D) channelSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·42 claims
- 4069US10811604B2Nonvolatile memory apparatus including resistive-change material layerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 20, 2020·1 cites·18 claims
- 4169US10199469B2Semiconductor device including metal-semiconductor junctionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 5, 2019·1 cites·20 claims
- 4268US2025275145A1Non-volatile memory device, electronic apparatus including the same, and method of manufacturing the non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4368US2025374539A1Three-dimensional vertical nonvolatile memory device including memory cell stringSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4468US2025201305A1Vertical non-volatile memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4568US2025024870A1Natural sugar-free syrup, and production method thereofCJ CHEILJEDANG CORP·Filed 2022·Application pending·0 cites
- 4667US2025254869A1Vertical nonvolatile memory device, electronic apparatus including the same, and method of manufacturing memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4767US2025126803A1Semiconductor device, and memory apparatus and electronic apparatus including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4866US11600774B2Nonvolatile memory device and operating method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 7, 2023·0 cites·11 claims
- 4964US12378120B2Wiring including graphene layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
- 5064US11935790B2Field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·38 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →