Inventor · disambiguated record
Ming-Shuan Li
Also filed as: LI MING · LI MING-SHUAN
41 granted patents·23 pending applications·62 citations·filing 2002–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD37GLOBALFOUNDRIES SG PTE LTD10HEFEI INST PHYSICAL SCI CAS2LU WEI-YUAN2TAIWAN SEMICONDUCTOR MFG2
Top patents by PatentIndex Score
64 records- 0197US12040405B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·4 cites·20 claims
- 0296US11289591B1Bipolar junction deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·4 cites·20 claims
- 0394US12166071B2Dielectric fins with air gap and backside self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·2 cites·20 claims
- 0493US9673084B2Isolation scheme for high voltage deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Jun 6, 2017·13 cites·22 claims
- 0592US12154946B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·1 cites·20 claims
- 0688US8754477B2Semiconductor device with multiple stress structures and method of forming the sameLU WEI-YUAN·Filed 2011·Granted Jun 17, 2014·10 cites·20 claims
- 0786US12324210B2Bipolar junction transistor with gate over terminalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 0884US12302604B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 0984US11688767B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·1 cites·20 claims
- 1083US12317602B2Forming ESD devices using multi-gate compatible processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 1183US11282953B2Transistor devices and methods of forming a transistor deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Mar 22, 2022·2 cites·20 claims
- 1283US2025287701A1Forming esd devices using multi-gate compatible processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1382US8828817B2Semiconductor device and method of forming the sameLU WEI-YUAN·Filed 2012·Granted Sep 9, 2014·5 cites·20 claims
- 1481US12051729B2Bipolar junction transistor with gate over terminalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
- 1580US2025359080A1Varactors having increased tuning ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1680US2025275179A1Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1779US2025040201A1Semiconductor device structure and method for forming the semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1878US11948936B2Forming ESD devices using multi-gate compatible processessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 2, 2024·0 cites·20 claims
- 1977US11830938B2Bipolar junction deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 28, 2023·0 cites·20 claims
- 2076US9870939B2RC-stacked MOSFET circuit for high voltage (HV) electrostatic discharge (ESD) protectionGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Jan 16, 2018·5 cites·21 claims
- 2176US2024379678A1Semiconductor Devices and Methods of Fabricating the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2276US2024379850A1Semiconductor devices with enhanced carrier mobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2376US2025301738A1Semiconductor structures with a hybrid substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2474US11843038B2Bipolar junction transistor with gate over terminalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
- 2574US7951680B2Integrated circuit system employing an elevated drainGLOBALFOUNDRIES SG PTE LTD·Filed 2008·Granted May 31, 2011·5 cites·20 claims
- 2674US2024379744A1Dielectric fins with air gap and backside self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2774US2024397694A1Semiconductor devices with threshold voltage modulation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2873US9178063B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 3, 2015·2 cites·20 claims
- 2972US11600719B2Bipolar junction deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 7, 2023·0 cites·20 claims
- 3072US10032766B2VDMOS transistors, BCD devices including VDMOS transistors, and methods for fabricating integrated circuits with such devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jul 24, 2018·2 cites·20 claims
- 3172US2024369421A1Complementary bipolar junction transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3271US2024014290A1Method and structure for diodes with backside contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3370US11637099B2Forming ESD devices using multi-gate compatible processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·0 cites·20 claims
- 3469US12230634B2Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 18, 2025·0 cites·20 claims
- 3569US11239330B2Bipolar junction transistor with gate over terminalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 3669US10424655B2Dual gate LDMOS and a process of forming thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Sep 24, 2019·1 cites·20 claims
- 3769US2025015159A1Varactors having increased tuning ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3868US11837459B2Method and structure for diodes with backside contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 5, 2023·0 cites·20 claims
- 3964US12336246B2Semiconductor structures with a hybrid substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·20 claims
- 4064US12213297B2Semiconductor devices with threshold voltage modulation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 28, 2025·0 cites·20 claims
- 4162US12078551B2Complementary bipolar junction transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 3, 2024·0 cites·20 claims
- 4262US2025234634A1Bipolar junction transistor with dielectric isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4362US2025338586A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4460US12139580B2Class of nitrogen-containing heterocyclic polymers, a class of polymer membranes and applications thereofWUHAN LIMO TECH CO LTD·Filed 2024·Granted Nov 12, 2024·0 cites·9 claims
- 4560US10272990B2Aircraft wing assemblyCOMMERCIAL AIRCRAFT CORP CN·Filed 2015·Granted Apr 30, 2019·2 cites·8 claims
- 4660US8853783B2ESD protection circuitGLOBALFOUNDRIES SG PTE LTD·Filed 2012·Granted Oct 7, 2014·1 cites·20 claims
- 4760US2025390087A1Fault diagnosis method for transmission chain based on joint entropy enhanced sparse learning using zero sequence currentUNIV HUNAN SCIENCE & TECHNOLOGY·Filed 2025·Application pending·0 cites
- 4858US2025132250A1Electrical interconnection structures for preventing fixed positive charges in diode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4957US2025133756A1Doped regions for neutralizing electrons in diode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5056US11600695B2Dielectric fins with air gap and backside self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·0 cites·20 claims
Showing the top 50 of 64 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →