Inventor · disambiguated record
Ming-Hsun Lin
Also filed as: LIN MING-HSUN
4 granted patents·7 pending applications·5 citations·filing 2021–2025
65Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD11
Top patents by PatentIndex Score
11 records- 0193US11579539B2Method and apparatus for improving critical dimension variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
- 0292US11988972B2Method and apparatus for improving critical dimension variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 21, 2024·2 cites·20 claims
- 0382US12379674B2Method and apparatus for improving critical dimension variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 0478US2025364261A1Plasma etch system including tunable plasma sheathTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0576US2025359009A1Deep trench capacitor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0665US12439582B2Deep trench capacitor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 0765US2024266179A1Plasma etch system including tunable plasma sheathTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0859US2025351387A1Deep trench capacitor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0955US2025227941A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1052US2024096930A1Trench capacitor structure and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1148US2024112954A1Self-aligned contact landing on a metal circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →