Inventor · disambiguated record
Ming-Jang Lin
Also filed as: LIN MING-JANG
7 granted patents·10 pending applications·148 citations·filing 1999–2013
86Inventor score
Files withANALOG AND POWER ELECTRONICS C4LIN WEI-CHIEH3ANALOG AND POWER ELECTRICS COR1ANPEC ELECTRONICS CORP1INERGY TECHNOLOGY INC1
Top patents by PatentIndex Score
17 records- 0187US6259618B1Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startupANALOG AND POWER ELECTRONICS C·Filed 2000·Granted Jul 10, 2001·41 cites·4 claims
- 0285US6800509B1Process for enhancement of voltage endurance and reduction of parasitic capacitance for a trench power MOSFETANPEC ELECTRONICS CORP·Filed 2003·Granted Oct 5, 2004·46 cites·12 claims
- 0368US6423618B1Method of manufacturing trench gate structureANALOG AND POWER ELECTRONICS C·Filed 1999·Granted Jul 23, 2002·29 cites·24 claims
- 0461US6888203B2Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startupANALOG AND POWER ELECTRICS COR·Filed 2003·Granted May 3, 2005·11 cites·6 claims
- 0558US6137122ALatch-up controllable insulated gate bipolar transistorANALOG AND POWER ELECTRONICS C·Filed 1999·Granted Oct 24, 2000·19 cites·14 claims
- 0648US2009117700A1Method for Manufacturing a Trench Power TransistorLIN WEI-CHIEH·Filed 2008·Application pending·0 cites
- 0748US2009114983A1Power Transistor Capable of Decreasing Capacitance between Gate and DrainLIN WEI-CHIEH·Filed 2008·Application pending·0 cites
- 0846US7105410B2Contact process and structure for a semiconductor deviceANALOG AND POWER ELECTRONICS C·Filed 2004·Granted Sep 12, 2006·2 cites·10 claims
- 0944US2009061584A1Semiconductor Process for Trench Power MOSFETLIN WEI-CHIEH·Filed 2008·Application pending·0 cites
- 1039US8138047B2Super junction semiconductor deviceLIN MING-JANG·Filed 2009·Granted Mar 20, 2012·0 cites·5 claims
- 1137US2004195689A1Butting contact structure and method incorporating with a silicide inserted between a contact region and a conductor for a small contact windowFiled 2004·Application pending·0 cites
- 1236US2007114601A1Gate contact structure for a power deviceLIN WEI-JYE·Filed 2006·Application pending·0 cites
- 1336US2003141555A1Butting contact structure and method incorporating with a silicide inserted between a contact region and a conductor for a small contact windowFiled 2003·Application pending·0 cites
- 1436US2007181948A1ESD protection deviceLIAW CHORNG-WEI·Filed 2006·Application pending·0 cites
- 1534US2001046147A1Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startupFiled 2001·Application pending·0 cites
- 1633US2013200499A1Semiconductor deviceINERGY TECHNOLOGY INC·Filed 2013·Application pending·0 cites
- 1731US2002053695A1Split buried layer for high voltage LDMOS transistorFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →