Inventor · disambiguated record
Miroslav Micovic
Also filed as: MICOVIC MIROSLAV
65 granted patents·802 citations·filing 1999–2022
99Inventor score
Top patents by PatentIndex Score
65 records- 0198US9385083B1Wafer-level die to package and die to die interconnects suspended over integrated heat sinksHRL LAB LLC·Filed 2015·Granted Jul 5, 2016·52 cites·14 claims
- 0297US10026672B1Recursive metal embedded chip assemblyHRL LAB LLC·Filed 2016·Granted Jul 17, 2018·19 cites·32 claims
- 0397US9214404B1Apparatus for mounting microelectronic chipsHRL LAB LLC·Filed 2013·Granted Dec 15, 2015·26 cites·27 claims
- 0497US8617927B1Method of mounting electronic chipsMARGOMENOS ALEXANDROS D·Filed 2011·Granted Dec 31, 2013·75 cites·27 claims
- 0597US8470652B1Monolithic integration of group III nitride enhancement layersBROWN DAVID F·Filed 2011·Granted Jun 25, 2013·27 cites·7 claims
- 0696US10483184B1Recursive metal embedded chip assemblyHRL LAB LLC·Filed 2018·Granted Nov 19, 2019·13 cites·34 claims
- 0796US9837372B1Wafer-level die to package and die to die interconnects suspended over integrated heat sinksHRL LAB LLC·Filed 2016·Granted Dec 5, 2017·16 cites·18 claims
- 0896US9337124B1Method of integration of wafer level heat spreaders and backside interconnects on microelectronics wafersHRL LAB LLC·Filed 2014·Granted May 10, 2016·34 cites·33 claims
- 0995US10079160B1Surface mount package for semiconductor devices with embedded heat spreadersHRL LAB LLC·Filed 2014·Granted Sep 18, 2018·21 cites·31 claims
- 1095US9954090B1Monolithic integration of group III nitride epitaxial layersHRL LAB LLC·Filed 2016·Granted Apr 24, 2018·8 cites·6 claims
- 1195US9142626B1Stepped field plate wide bandgap field-effect transistor and methodHRL LAB LLC·Filed 2013·Granted Sep 22, 2015·18 cites·15 claims
- 1294US8383471B1Self aligned sidewall gate GaN HEMTHRL LAB LLC·Filed 2011·Granted Feb 26, 2013·28 cites·27 claims
- 1393US10170611B1T-gate field effect transistor with non-linear channel layer and/or gate foot faceHRL LAB LLC·Filed 2016·Granted Jan 1, 2019·16 cites·15 claims
- 1492US9496197B1Near junction cooling for GaN devicesMICOVIC MIROSLAV·Filed 2014·Granted Nov 15, 2016·16 cites·13 claims
- 1592US9059140B1Simultaneous controlled depth hot embossing and active side protection during packaging and assembly of wide bandgap devicesHRL LAB LLC·Filed 2013·Granted Jun 16, 2015·9 cites·10 claims
- 1692US7477102B1High efficiency linear microwave power amplifierHRL LAB LLC·Filed 2006·Granted Jan 13, 2009·28 cites·3 claims
- 1791US9202880B1Etch-based fabrication process for stepped field-plate wide-bandgapHRL LAB LLC·Filed 2013·Granted Dec 1, 2015·10 cites·16 claims
- 1891US9148092B1Monolithic integration of field-plate and T-gate devicesHRL LAB LLC·Filed 2013·Granted Sep 29, 2015·12 cites·27 claims
- 1991US8748244B1Enhancement and depletion mode GaN HMETs on the same substrateCORRION ANDREA·Filed 2012·Granted Jun 10, 2014·15 cites·6 claims
- 2090US9842814B1Integrated RF subsystemHRL LAB LLC·Filed 2016·Granted Dec 12, 2017·7 cites·23 claims
- 2190US8686473B1Apparatus and method for reducing the interface resistance in GaN heterojunction FETsMICOVIC MIROSLAV·Filed 2010·Granted Apr 1, 2014·14 cites·11 claims
- 2290US7598131B1High power-low noise microwave GaN heterojunction field effect transistorHRL LAB LLC·Filed 2008·Granted Oct 6, 2009·20 cites·42 claims
- 2389US10418473B1Monolithic integration of group III nitride epitaxial layersHRL LAB LLC·Filed 2018·Granted Sep 17, 2019·3 cites·9 claims
- 2489US10217648B1Fabrication of microfluidic channels in diamondHRL LAB LLC·Filed 2017·Granted Feb 26, 2019·8 cites·20 claims
- 2589US9276529B1High performance GaN operational amplifier with wide bandwidth and high dynamic rangeHRL LAB LLC·Filed 2014·Granted Mar 1, 2016·13 cites·22 claims
- 2689US7989277B1Integrated structure with transistors and Schottky diodes and process for fabricating the sameHRL LAB LLC·Filed 2007·Granted Aug 2, 2011·18 cites·14 claims
- 2789US7695564B1Thermal management substrateHRL LAB LLC·Filed 2005·Granted Apr 13, 2010·20 cites·4 claims
- 2888US9449833B1Methods of fabricating self-aligned FETS using multiple sidewall spacersHRL LAB LLC·Filed 2013·Granted Sep 20, 2016·10 cites·28 claims
- 2987US9929243B1Stepped field plate wide bandgap field-effect transistor and methodHRL LAB LLC·Filed 2015·Granted Mar 27, 2018·4 cites·17 claims
- 3087US9419122B1Etch-based fabrication process for stepped field-plate wide-bandgapHRL LAB LLC·Filed 2015·Granted Aug 16, 2016·4 cites·7 claims
- 3187US8558281B1Gate metallization methods for self-aligned sidewall gate GaN HEMTREGAN DEAN C·Filed 2011·Granted Oct 15, 2013·15 cites·10 claims
- 3286US8980759B1Method of fabricating slanted field-plate GaN heterojunction field-effect transistorHRL LAB LLC·Filed 2014·Granted Mar 17, 2015·7 cites·23 claims
- 3386US8728884B1Enhancement mode normally-off gallium nitride heterostructure field effect transistorHUSSAIN TAHIR·Filed 2009·Granted May 20, 2014·13 cites·10 claims
- 3486US8368119B1Integrated structure with transistors and schottky diodes and process for fabricating the sameHRL LAB LLC·Filed 2011·Granted Feb 5, 2013·8 cites·13 claims
- 3585US9252247B1Apparatus and method for reducing the interface resistance in GaN Heterojunction FETsHRL LAB LLC·Filed 2014·Granted Feb 2, 2016·6 cites·15 claims
- 3680US9379680B1Systems, methods, and apparatus for a power amplifier moduleBOEING CO·Filed 2013·Granted Jun 28, 2016·6 cites·20 claims
- 3780US8698201B1Gate metallization methods for self-aligned sidewall gate GaN HEMTHRL LAB LLC·Filed 2013·Granted Apr 15, 2014·5 cites·15 claims
- 3880US7470941B2High power-low noise microwave GaN heterojunction field effect transistorHRL LAB LLC·Filed 2002·Granted Dec 30, 2008·27 cites·33 claims
- 3978US8796736B1Monolithic integration of group III nitride epitaxial layersHRL LAB LLC·Filed 2013·Granted Aug 5, 2014·2 cites·5 claims
- 4078US6852615B2Ohmic contacts for high electron mobility transistors and a method of making the sameHRL LAB LLC·Filed 2003·Granted Feb 8, 2005·27 cites·31 claims
- 4177US9331735B1GaN based active cancellation circuit for high power simultaneous transmit and receive systemsHRL LAB LLC·Filed 2014·Granted May 3, 2016·4 cites·21 claims
- 4276US7098490B2GaN DHFETHRL LAB LLC·Filed 2004·Granted Aug 29, 2006·20 cites·20 claims
- 4375US8860091B2Group III-N HFET with a graded barrier layerBROWN DAVID F·Filed 2012·Granted Oct 14, 2014·3 cites·21 claims
- 4471US9378949B1Monolithic integration of group III nitride epitaxial layersHRL LAB LLC·Filed 2014·Granted Jun 28, 2016·1 cites·7 claims
- 4569US9780014B1Simultaneous controlled depth hot embossing and active side protection during packaging and assembly of wide bandgap devicesHRL LAB LLC·Filed 2015·Granted Oct 3, 2017·1 cites·23 claims
- 4669US6884704B2Ohmic metal contact and channel protection in GaN devices using an encapsulation layerHRL LAB LLC·Filed 2003·Granted Apr 26, 2005·10 cites·24 claims
- 4769US6287946B1Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layersHRL LAB LLC·Filed 1999·Granted Sep 11, 2001·21 cites·9 claims
- 4868US8766321B2Self-aligned sidewall gate GaN HEMTHRL LAB·Filed 2012·Granted Jul 1, 2014·2 cites·6 claims
- 4965US6583455B1Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layersHRL LAB INC·Filed 2000·Granted Jun 24, 2003·11 cites·42 claims
- 5065US6232624B1InPSb channel HEMT on InP for RF applicationHUGHES ELECTRONICS CORP·Filed 1999·Granted May 15, 2001·23 cites·23 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →