Inventor · disambiguated record
Miki Moriyama
Also filed as: MORIYAMA MIKI
32 granted patents·10 pending applications·85 citations·filing 2003–2025
95Inventor score
Top patents by PatentIndex Score
42 records- 0191US8759123B2Method of manufacturing LED lampWADA SATOSHI·Filed 2010·Granted Jun 24, 2014·15 cites·20 claims
- 0282USD699119SPackaging bagFUKUDA TETSUO·Filed 2012·Granted Feb 11, 2014·32 cites·1 claims
- 0382US7723743B2Semiconductor light emitting elementTOYODA GOSEI KK·Filed 2007·Granted May 25, 2010·12 cites·12 claims
- 0478US2023257902A1Method for producing a group iii nitride semiconductorTOYODA GOSEI KK·Filed 2023·Application pending·0 cites
- 0575US8609444B2Manufacturing method of mounting part of semiconductor light emitting element, manufacturing method of light emitting device, and semiconductor light emitting elementWADA SATOSHI·Filed 2010·Granted Dec 17, 2013·4 cites·7 claims
- 0672US11280024B2Method for producing a group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphereTOYODA GOSEI KK·Filed 2020·Granted Mar 22, 2022·0 cites·5 claims
- 0772US7550782B2Semiconductor device having an undercoat layer and method of manufacturing the sameTOYODA GOSEI KK·Filed 2005·Granted Jun 23, 2009·4 cites·7 claims
- 0872US2022081800A1Method for producing a group iii nitride semiconductorTOYODA GOSEI KK·Filed 2021·Application pending·0 cites
- 0970US10329687B2Method for producing Group III nitride semiconductor including growing Group III nitride semiconductor through flux methodTOYODA GOSEI KK·Filed 2017·Granted Jun 25, 2019·1 cites·20 claims
- 1070US9567693B2Method for producing a group III nitride semiconductor single crystal and method for producing a GaN substrateTOYODA GOSEI KK·Filed 2013·Granted Feb 14, 2017·2 cites·13 claims
- 1166US9099627B2Method for producing group III nitride semiconductor light-emitting deviceTOTANI SHINGO·Filed 2011·Granted Aug 4, 2015·1 cites·20 claims
- 1261US9388506B2Semiconductor crystal removal apparatus and production method for semiconductor crystalTOYODA GOSEI KK·Filed 2013·Granted Jul 12, 2016·0 cites·8 claims
- 1361US7947521B2Method for forming electrode for group-III nitride compound semiconductor light-emitting devicesTOYOTA GOSEI CO LTD·Filed 2008·Granted May 24, 2011·1 cites·8 claims
- 1461US2025369153A1Method for manufacturing group iii nitride semiconductorTOYODA GOSEI KK·Filed 2025·Application pending·0 cites
- 1560US9087969B2Light-emitting deviceWADA SATOSHI·Filed 2010·Granted Jul 21, 2015·1 cites·18 claims
- 1660US8716047B2Method for producing transparent conductive layer comprising TIO2 and method for producing semiconductor light-emitting element utilizing said method for producing transparent conductive layerGOSHONOO KOICHI·Filed 2009·Granted May 6, 2014·3 cites·20 claims
- 1759US2025320631A1Seed substrate and method for producing group iii nitride semiconductorTOYODA GOSEI KK·Filed 2025·Application pending·0 cites
- 1858US8350284B2Light emitting element and light emitting deviceTOYODA GOSEI KK·Filed 2009·Granted Jan 8, 2013·1 cites·24 claims
- 1956US7538027B2Fabrication method for semiconductor interconnectionsKOBE STEEL LTD·Filed 2006·Granted May 26, 2009·1 cites·17 claims
- 2051US7824929B2Method for producing group III nitride-based compound semiconductorTOYODA GOSEI KK·Filed 2008·Granted Nov 2, 2010·0 cites·20 claims
- 2150US9153439B2Method for etching a group III nitride semiconductor, method for producing a group III nitride semiconductor crystal, and method for producing a GaN substrateTOYODA GOSEI KK·Filed 2014·Granted Oct 6, 2015·0 cites·18 claims
- 2248US7968216B2Internal gear pumpTOYODA GOSEI KK·Filed 2006·Granted Jun 28, 2011·0 cites·8 claims
- 2348US2009200563A1Group III nitride semiconductor light-emitting device and production method thereforTOYODA GOSEI KK·Filed 2009·Application pending·0 cites
- 2447US2008248639A1Method for forming electrode for group III nitride based compound semiconductor and method for manufacturing p-type group III nitride based compound semiconductorTOYODA GOSEI KK·Filed 2008·Application pending·0 cites
- 2547US2017081780A1METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL AND METHOD FOR PRODUCING A GaN SUBSTRATETOYODA GOSEI KK·Filed 2016·Application pending·0 cites
- 2646US8962456B2Group III nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor deviceTOYODA GOSEI KK·Filed 2013·Granted Feb 24, 2015·0 cites·16 claims
- 2746US8773017B2Glass-sealed LED lamp and manufacturing method of the sameWADA SATOSHI·Filed 2012·Granted Jul 8, 2014·0 cites·27 claims
- 2846US2020299858A1Method for producing group iii nitride semiconductorTOYODA GOSEI KK·Filed 2020·Application pending·0 cites
- 2946US2009072267A1Group III nitride-based compound semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2008·Application pending·0 cites
- 3045US9932688B2Method for producing group III nitride semiconductor single crystalTOYODA GOSEI KK·Filed 2016·Granted Apr 3, 2018·0 cites·16 claims
- 3145US9903042B2Method for producing group III nitride semiconductor using a crucibleTOYODA GOSEI KK·Filed 2015·Granted Feb 27, 2018·0 cites·6 claims
- 3245US7190076B2Electrode for p-type Group III nitride compound semiconductor layer and method for producing the sameTOYODA GOSEI KK·Filed 2003·Granted Mar 13, 2007·2 cites·20 claims
- 3345US6975012B2Semiconductor radiation detector having voltage application means comprises InxCdyTez on CdTe semiconductor substrateACRORAD CO LTD·Filed 2003·Granted Dec 13, 2005·5 cites·2 claims
- 3445US2008308833A1Group III nitride-based compound semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2008·Application pending·0 cites
- 3544US8309381B2Group III nitride semiconductor light-emitting device and production method thereforMORIYAMA MIKI·Filed 2009·Granted Nov 13, 2012·0 cites·2 claims
- 3643US10693032B2Method for producing Group III nitride semiconductor, seed substrate and Group III nitride semiconductor crystalTOYODA GOSEI KK·Filed 2017·Granted Jun 23, 2020·0 cites·10 claims
- 3743US9691610B2Method for producing a group III nitride semiconductor crystal and method for producing a GaN substrateTOYODA GOSEI KK·Filed 2014·Granted Jun 27, 2017·0 cites·17 claims
- 3843US8610167B2Group III nitride compound semiconductor light-emitting device and method for producing the sameMORIYAMA MIKI·Filed 2009·Granted Dec 17, 2013·0 cites·8 claims
- 3943US7781339B2Method of fabricating semiconductor interconnectionsKOBE STEEL LTD·Filed 2007·Granted Aug 24, 2010·0 cites·13 claims
- 4041US7164207B2Wiring structure for semiconductor deviceTOYODA GOSEI KK·Filed 2003·Granted Jan 16, 2007·0 cites·14 claims
- 4139US7564062B2Electrode for p-type SiCTOYODA GOSEI KK·Filed 2003·Granted Jul 21, 2009·0 cites·17 claims
- 4238US9315416B2Method of manufacturing light-emitting deviceYAMAGUCHI SEIJI·Filed 2011·Granted Apr 19, 2016·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →