Inventor · disambiguated record
Mitsuhiro Noguchi
Also filed as: NOGUCHI MITSUHIRO
143 granted patents·18 pending applications·3,788 citations·filing 1995–2024
99Inventor score
Top patents by PatentIndex Score
161 records- 0199US7006379B2Semiconductor memoryTOSHIBA KK·Filed 2005·Granted Feb 28, 2006·171 cites·7 claims
- 0298US7057936B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Jun 6, 2006·179 cites·20 claims
- 0398US7009881B2Semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Mar 7, 2006·182 cites·18 claims
- 0498US6925009B2Semiconductor memoryTOSHIBA KK·Filed 2004·Granted Aug 2, 2005·130 cites·17 claims
- 0598US6894931B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2003·Granted May 17, 2005·140 cites·36 claims
- 0698US6411548B1Semiconductor memory having transistors connected in seriesTOSHIBA KK·Filed 2000·Granted Jun 25, 2002·232 cites·31 claims
- 0797US7245534B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2005·Granted Jul 17, 2007·63 cites·18 claims
- 0897US7184356B2Semiconductor memory deviceTOSHIBA KK·Filed 2005·Granted Feb 27, 2007·64 cites·17 claims
- 0997US6870773B2Data writing method for semiconductor memory device and semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Mar 22, 2005·112 cites·18 claims
- 1097US6819592B2Semiconductor memoryTOSHIBA KK·Filed 2002·Granted Nov 16, 2004·129 cites·8 claims
- 1197US6713834B2Semiconductor device having two-layered charge storage electrodeTOSHIBA KK·Filed 2001·Granted Mar 30, 2004·117 cites·27 claims
- 1297US6040610ASemiconductor deviceTOSHIBA KK·Filed 1998·Granted Mar 21, 2000·206 cites·25 claims
- 1396US7359274B2Semiconductor memory deviceTOSHIBA KK·Filed 2007·Granted Apr 15, 2008·33 cites·17 claims
- 1495US7430693B2Data memory systemTOSHIBA KK·Filed 2005·Granted Sep 30, 2008·42 cites·20 claims
- 1595US6958938B2Data writing method for semiconductor memory device and semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Oct 25, 2005·78 cites·20 claims
- 1695US6323525B1MISFET semiconductor device having relative impurity concentration levels between layersTOSHIBA KK·Filed 1998·Granted Nov 27, 2001·217 cites·25 claims
- 1795US6043536ASemiconductor deviceTOSHIBA KK·Filed 1999·Granted Mar 28, 2000·146 cites·20 claims
- 1894US7099190B2Data storage systemTOSHIBA KK·Filed 2004·Granted Aug 29, 2006·88 cites·17 claims
- 1994US6773225B2Gas turbine and method of bleeding gas therefromMITSUBISHI HEAVY IND LTD·Filed 2002·Granted Aug 10, 2004·84 cites·4 claims
- 2093US7453728B2Data storage system with enhanced reliability with respect to data destruction caused by reading-out of the dataTOSHIBA KK·Filed 2006·Granted Nov 18, 2008·29 cites·5 claims
- 2192US8476138B2Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor deviceCHAKIHARA HIRAKU·Filed 2011·Granted Jul 2, 2013·12 cites·7 claims
- 2291US6917072B2Semiconductor memory deviceTOSHIBA KK·Filed 2003·Granted Jul 12, 2005·61 cites·21 claims
- 2391US6278165B1MIS transistor having a large driving current and method for producing the sameTOSHIBA KK·Filed 1999·Granted Aug 21, 2001·72 cites·7 claims
- 2491US6169688B1Magnetic storage device using unipole currents for selecting memory cellsTOSHIBA KK·Filed 1999·Granted Jan 2, 2001·94 cites·22 claims
- 2590US6774462B2Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratioTOSHIBA KK·Filed 2002·Granted Aug 10, 2004·39 cites·14 claims
- 2689US8553467B2Nonvolatile semiconductor memory deviceSHIMURA YASUHIRO·Filed 2011·Granted Oct 8, 2013·13 cites·17 claims
- 2789US7420259B2Semiconductor device having two-layered charge storage electrodeTOSHIBA KK·Filed 2006·Granted Sep 2, 2008·13 cites·17 claims
- 2889US6903422B2Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systemsTOSHIBA KK·Filed 2003·Granted Jun 7, 2005·38 cites·4 claims
- 2989US6882592B2Semiconductor memory deviceTOSHIBA KK·Filed 2003·Granted Apr 19, 2005·36 cites·30 claims
- 3089US6819590B2Semiconductor memoryTOSHIBA KK·Filed 2002·Granted Nov 16, 2004·51 cites·54 claims
- 3188US8395922B2Semiconductor memory deviceNOGUCHI MITSUHIRO·Filed 2011·Granted Mar 12, 2013·13 cites·23 claims
- 3288US8319316B2Depletion MOS transistor and enhancement MOS transistorKUTSUKAKE HIROYUKI·Filed 2010·Granted Nov 27, 2012·11 cites·14 claims
- 3388US7972920B2Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor deviceHITACHI ULSI SYS CO LTD·Filed 2010·Granted Jul 5, 2011·7 cites·12 claims
- 3488US7911844B2Non-volatile semiconductor storage deviceTOSHIBA KK·Filed 2008·Granted Mar 22, 2011·13 cites·18 claims
- 3588US7652319B2Semiconductor memory device including a stacked gate having a charge storage layer and a control gate, and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jan 26, 2010·16 cites·6 claims
- 3688US7560766B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2008·Granted Jul 14, 2009·11 cites·7 claims
- 3788US7372113B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted May 13, 2008·31 cites·20 claims
- 3888US7038291B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2002·Granted May 2, 2006·48 cites·6 claims
- 3988US6806132B2Semiconductor device having two-layered charge storage electrodeTOSHIBA KK·Filed 2003·Granted Oct 19, 2004·35 cites·4 claims
- 4087US10134749B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Nov 20, 2018·5 cites·13 claims
- 4186US8185802B2Data memory systemNOGUCHI MITSUHIRO·Filed 2009·Granted May 22, 2012·14 cites·19 claims
- 4286US7339227B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2006·Granted Mar 4, 2008·9 cites·19 claims
- 4386US6953965B2Semiconductor device with source line and fabrication method thereofTOSHIBA KK·Filed 2003·Granted Oct 11, 2005·27 cites·6 claims
- 4486US6313511B1Semiconductor deviceTOSHIBA KK·Filed 2000·Granted Nov 6, 2001·41 cites·9 claims
- 4585US7800154B2Nonvolatile semiconductor memory device with twin-wellTOSHIBA KK·Filed 2005·Granted Sep 21, 2010·8 cites·5 claims
- 4684US8093664B2Non-volatile semiconductor memory device and depletion-type MOS transistorGOMIKAWA KENJI·Filed 2009·Granted Jan 10, 2012·11 cites·15 claims
- 4784US7872289B2Semiconductor device including memory cell having charge accumulation layerTOSHIBA KK·Filed 2008·Granted Jan 18, 2011·11 cites·20 claims
- 4884US6483176B2Semiconductor with multilayer wiring structure that offer high speed performanceTOSHIBA KK·Filed 2000·Granted Nov 19, 2002·33 cites·20 claims
- 4984US5804851ASemiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 1997·Granted Sep 8, 1998·60 cites·28 claims
- 5083US11227915B2Semiconductor deviceKIOXIA CORP·Filed 2020·Granted Jan 18, 2022·2 cites·20 claims
Showing the top 50 of 161 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →