Inventor · disambiguated record
Michael Rowlandson
Also filed as: ROWLANDSON MICHAEL · ROWLANDSON MICHAEL B
8 granted patents·228 citations·filing 1992–2003
89Inventor score
Top patents by PatentIndex Score
8 records- 0186US5394000ATrench capacitor structureNORTHERN TELECOM LTD·Filed 1993·Granted Feb 28, 1995·59 cites·9 claims
- 0286US5275974AMethod of forming electrodes for trench capacitorsNORTHERN TELECOM LTD·Filed 1992·Granted Jan 4, 1994·60 cites·20 claims
- 0384US6686250B1Method of forming self-aligned bipolar transistorMAXIM INTEGRATED PRODUCTS·Filed 2002·Granted Feb 3, 2004·38 cites·22 claims
- 0482US6767798B2Method of forming self-aligned NPN transistor with raised extrinsic baseMAXIM INTEGRATED PRODUCTS·Filed 2002·Granted Jul 27, 2004·32 cites·17 claims
- 0564US7026666B2Self-aligned NPN transistor with raised extrinsic baseMAXIM INTEGRATED PRODUCTS·Filed 2003·Granted Apr 11, 2006·11 cites·28 claims
- 0663US6845044B2Method of preventing high Icc at start-up in zero-power EEPROM cells for PLD applicationsLATTICE SEMICONDUCTOR CORP·Filed 2002·Granted Jan 18, 2005·9 cites·6 claims
- 0761US6861324B2Method of forming a super self-aligned hetero-junction bipolar transistorMAXIM INTEGRATED PRODUCTS·Filed 2001·Granted Mar 1, 2005·10 cites·15 claims
- 0856US6636442B2Non-volatile memory element having a cascoded transistor scheme to reduce oxide field stressLATTICE SEMICONDUCTOR CORP·Filed 2002·Granted Oct 21, 2003·9 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →