Inventor · disambiguated record
Michael A. Sadd
Also filed as: SADD MICHAEL · SADD MICHAEL A · SADD MICHAEL ALAN
53 granted patents·10 pending applications·1,607 citations·filing 2000–2025
98Inventor score
Files withFREESCALE SEMICONDUCTOR INC32MOTOROLA INC8EVERSPIN TECHNOLOGIES INC7NXP USA INC6ACTEL CORP4
Top patents by PatentIndex Score
63 records- 0198US6686245B1Vertical MOSFET with asymmetric gate structureMOTOROLA INC·Filed 2002·Granted Feb 3, 2004·335 cites·19 claims
- 0298US6297095B1Memory device that includes passivated nanoclusters and method for manufactureMOTOROLA INC·Filed 2000·Granted Oct 2, 2001·284 cites·17 claims
- 0397US9548116B2Resistive memory with program verify and erase verify capabilityFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jan 17, 2017·36 cites·17 claims
- 0497US6320784B1Memory cell and method for programming thereofMOTOROLA INC·Filed 2000·Granted Nov 20, 2001·180 cites·14 claims
- 0596US9640256B1Nonvolatile static random access memory (NVSRAM) system having a static random access memory (SRAM) array and a resistive memory arrayFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted May 2, 2017·23 cites·20 claims
- 0696US9520173B1Magnetic random access memory (MRAM) and method of operationFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Dec 13, 2016·23 cites·20 claims
- 0796US6706599B1Multi-bit non-volatile memory device and method thereforMOTOROLA INC·Filed 2003·Granted Mar 16, 2004·127 cites·33 claims
- 0895US9659623B1Memory having a plurality of resistive non-volatile memory cellsFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted May 23, 2017·15 cites·20 claims
- 0995US6413819B1Memory device and method for using prefabricated isolated storage elementsMOTOROLA INC·Filed 2000·Granted Jul 2, 2002·128 cites·21 claims
- 1094US6444545B1Device structure for storing charge and method thereforeMOTOROLA INC·Filed 2000·Granted Sep 3, 2002·99 cites·11 claims
- 1192US7839681B2Push-pull FPGA cellACTEL CORP·Filed 2008·Granted Nov 23, 2010·25 cites·6 claims
- 1292US7456465B2Split gate memory cell and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 25, 2008·19 cites·8 claims
- 1391US6400610B1Memory device including isolated storage elements that utilize hole conduction and method thereforMOTOROLA INC·Filed 2000·Granted Jun 4, 2002·63 cites·8 claims
- 1490US7517747B2Nanocrystal non-volatile memory cell and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 14, 2009·15 cites·13 claims
- 1590US6307782B1Process for operating a semiconductor deviceMOTOROLA INC·Filed 2000·Granted Oct 23, 2001·57 cites·20 claims
- 1689US10224088B1Memory with a global reference circuitNXP USA INC·Filed 2018·Granted Mar 5, 2019·10 cites·20 claims
- 1789US9514810B1Resistive non-volatile memory cell and method for programming sameFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Dec 6, 2016·10 cites·20 claims
- 1889US7692972B1Split gate memory cell for programmable circuit deviceACTEL CORP·Filed 2008·Granted Apr 6, 2010·24 cites·12 claims
- 1988US7906805B2Reduced-edge radiation-tolerant non-volatile transistor memory cellsACTEL CORP·Filed 2008·Granted Mar 15, 2011·17 cites·17 claims
- 2086US8498140B2Two-transistor floating-body dynamic memory cellFOSSUM JERRY G·Filed 2008·Granted Jul 30, 2013·15 cites·35 claims
- 2183US9779795B1Magnetic random access memory (MRAM) and method of operationNXP USA INC·Filed 2016·Granted Oct 3, 2017·6 cites·20 claims
- 2282US9741417B1Sense amplifier circuitFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Aug 22, 2017·6 cites·23 claims
- 2382US7279997B2Voltage controlled oscillator with a multiple gate transistor and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 9, 2007·8 cites·14 claims
- 2479US9741435B1Sense amplifier circuitFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Aug 22, 2017·5 cites·23 claims
- 2579US7800164B2Nanocrystal non-volatile memory cell and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Sep 21, 2010·6 cites·7 claims
- 2678US9697897B2Memory device with combined non-volatile memory (NVM) and volatile memorySADD MICHAEL A·Filed 2014·Granted Jul 4, 2017·7 cites·12 claims
- 2778US6855979B2Multi-bit non-volatile memory device and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Feb 15, 2005·21 cites·6 claims
- 2876US9847127B1Resistive non-volatile memory and a method for sensing a memory cell in a resistive non-volatile memoryNXP USA INC·Filed 2016·Granted Dec 19, 2017·4 cites·20 claims
- 2976US9613701B2Ternary content addressable memory (TCAM) with programmable resistive elementsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Apr 4, 2017·4 cites·20 claims
- 3076US7732278B2Split gate memory cell and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Jun 8, 2010·5 cites·12 claims
- 3175US9823874B2Memory device with combined non-volatile memory (NVM) and volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Nov 21, 2017·4 cites·17 claims
- 3273US9935616B2Programmable resistive elements as variable tuning elementsFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Apr 3, 2018·2 cites·11 claims
- 3369US7582929B2Electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 1, 2009·4 cites·15 claims
- 3466US8351276B2Soft program of a non-volatile memory blockFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Jan 8, 2013·3 cites·20 claims
- 3565US9923553B2Systems and methods for non-volatile flip flopsFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Mar 20, 2018·2 cites·24 claims
- 3665US9607663B2Non-volatile dynamic random access memory (NVDRAM) with programming lineFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Mar 28, 2017·2 cites·18 claims
- 3765US7619275B2Process for forming an electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 17, 2009·3 cites·20 claims
- 3864US9576661B2Systems and methods for SRAM with backup non-volatile memory that includes MTJ resistive elementsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Feb 21, 2017·2 cites·17 claims
- 3963US7679125B2Back-gated semiconductor device with a storage layer and methods for forming thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 16, 2010·2 cites·14 claims
- 4063US7622349B2Floating gate non-volatile memory and method thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 24, 2009·2 cites·19 claims
- 4161US2025356899A1Array architecture for distributed mramEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 4260US2025292850A1Magnetic tunnel junction anti-fuse including non-magnetic stackEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 4359US2025292815A1Anti-fuse and fuse in magnetoresistive deviceEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 4459US2025329366A1Sensing standalone mtj without biasEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 4558US9515635B1Programmable resistive elements as variable tuning elementsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Dec 6, 2016·1 cites·9 claims
- 4658US2025295040A1Mtj antifuse with trim enable and method of operationEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 4758US2025292849A1Reference resistor having variable resistanceEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 4852US2024420796A1Distributed mram configuration bit and method of repairEVERSPIN TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 4949US12051476B2Testing disruptive memoriesNXP USA INC·Filed 2022·Granted Jul 30, 2024·0 cites·18 claims
- 5048US10410705B2Sense path circuitry suitable for magnetic tunnel junction memoriesNXP USA INC·Filed 2017·Granted Sep 10, 2019·0 cites·15 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →