Inventor · disambiguated record
Michihiro Sano
Also filed as: SANO MICHIHIRO
28 granted patents·5 pending applications·209 citations·filing 1991–2016
95Inventor score
Top patents by PatentIndex Score
33 records- 0189US6673478B2Crystal-growth substrate and a ZnO-containing compound semiconductor deviceSTANLEY ELECTRIC CO LTD·Filed 2002·Granted Jan 6, 2004·46 cites·20 claims
- 0287US6664565B1ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystalSTANLEY ELECTRIC CO LTD·Filed 2000·Granted Dec 16, 2003·42 cites·16 claims
- 0385US8137458B2Epitaxial growth of ZnO with controlled atmosphereKATO HIROYUKI·Filed 2008·Granted Mar 20, 2012·5 cites·23 claims
- 0481US6635903B2White light emission diodeSTANLEY ELECTRIC CO LTD·Filed 2001·Granted Oct 21, 2003·34 cites·5 claims
- 0580US7858436B2Semiconductor device, its manufacture method and template substrateSTANLEY ELECTRIC CO LTD·Filed 2008·Granted Dec 28, 2010·5 cites·6 claims
- 0680US7691203B2Film forming apparatusAIR WATER INC·Filed 2006·Granted Apr 6, 2010·4 cites·8 claims
- 0779US7829207B2Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrateSTANLEY ELECTRIC CO LTD·Filed 2008·Granted Nov 9, 2010·5 cites·6 claims
- 0878US6407405B1p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystalsSTANLEY ELECTRIC CO LTD·Filed 2000·Granted Jun 18, 2002·30 cites·15 claims
- 0977US7288208B2Method of manufacturing ZnO substrate from ZnO crystal formed by hydrothermal synthesis methodSTANLEY ELECTRIC CO LTD·Filed 2006·Granted Oct 30, 2007·2 cites·8 claims
- 1075US8436351B2ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting deviceYAMAMURO TOMOFUMI·Filed 2010·Granted May 7, 2013·2 cites·16 claims
- 1175US7482618B2ZnO group epitaxial semiconductor device and its manufactureSTANLEY ELECTRIC CO LTD·Filed 2005·Granted Jan 27, 2009·4 cites·26 claims
- 1273US7438762B2Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrateSTANLEY ELECTRIC CO LTD TOKYO·Filed 2006·Granted Oct 21, 2008·5 cites·8 claims
- 1371US8043879B2Semiconductor light emitting device manufacture methodSTANLEY ELECTRIC CO LTD·Filed 2010·Granted Oct 25, 2011·1 cites·10 claims
- 1471US7834371B2Reflective type semiconductor light emitting deviceSTANLEY ELECTRIC CO LTD·Filed 2008·Granted Nov 16, 2010·3 cites·14 claims
- 1561US8039867B2ZnO-containing semiconductor layer, its manufacture method, and semiconductor light emitting deviceSTANLEY ELECTRIC CO LTD·Filed 2009·Granted Oct 18, 2011·1 cites·15 claims
- 1655US9064791B2Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, and an n-type ZnO based compound semiconductor laminate structureSTANLEY ELECTRIC CO LTD·Filed 2014·Granted Jun 23, 2015·0 cites·6 claims
- 1755US7728347B2ZnO layer and semiconductor light emitting deviceSTANLEY ELECTRIC CO LTD·Filed 2009·Granted Jun 1, 2010·0 cites·9 claims
- 1854US7968905B2ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting deviceSTANLEY ELECTRIC CO LTD·Filed 2008·Granted Jun 28, 2011·0 cites·16 claims
- 1953US9064790B2Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structureSTANLEY ELECTRIC CO LTD·Filed 2013·Granted Jun 23, 2015·0 cites·17 claims
- 2053US7718468B2Manufacture method for ZnO-containing compound semiconductor layerSTANLEY ELECTRIC CO LTD·Filed 2008·Granted May 18, 2010·0 cites·10 claims
- 2152US9496350B2P-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor element, and an N-type ZnO based compound semiconductor laminate structureSTANLEY ELECTRIC CO LTD·Filed 2015·Granted Nov 15, 2016·0 cites·6 claims
- 2251US8154018B2Semiconductor device, its manufacture method and template substrateKATO HIROYUKI·Filed 2010·Granted Apr 10, 2012·0 cites·3 claims
- 2349US7943927B2ZnO based semiconductor light emitting device and its manufacture methodSTANLEY ELECTRIC CO LTD·Filed 2009·Granted May 17, 2011·0 cites·10 claims
- 2448US9947826B2ZnO-containing semiconductor structure and manufacturing thereofSTANLEY ELECTRIC CO LTD·Filed 2016·Granted Apr 17, 2018·0 cites·16 claims
- 2548US2006170013A1ZnO group epitaxial semiconductor device and its manufactureTAKAFUMI YAO·Filed 2006·Application pending·0 cites
- 2647US7968363B2Manufacture method for ZnO based semiconductor crystal and light emitting device using sameSTANLEY ELECTRIC CO LTD·Filed 2010·Granted Jun 28, 2011·0 cites·5 claims
- 2746US5707900AMethod of heat-treating semiconductor crystal of a group II-group VI compoundSTANLEY ELECTRIC CO LTD·Filed 1996·Granted Jan 13, 1998·14 cites·4 claims
- 2846US2007134842A1Manufacture method for ZnO based semiconductor crystal and light emitting device using sameKOTANI HIROSHI·Filed 2006·Application pending·0 cites
- 2944US8143618B2ZnO based semiconductor device and its manufacture methodKOTANI HIROSHI·Filed 2009·Granted Mar 27, 2012·0 cites·10 claims
- 3043US5174854ACrystal growth of group II-VI compound semiconductorSTANLEY ELECTRIC CO LTD·Filed 1991·Granted Dec 29, 1992·6 cites·17 claims
- 3140US2007034144A1Oxide crystal growth apparatus and fabrication method using the sameOGAWA AKIO·Filed 2006·Application pending·0 cites
- 3240US2014084288A1ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND METHOD FOR PRODUCING THE SAMESTANLEY ELECTRIC CO LTD·Filed 2013·Application pending·0 cites
- 3328US2010233836A1Method for manufacturing zinc oxide based semiconductor deviceSTANLEY ELECTRIC CO LTD·Filed 2010·Application pending·0 cites
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