Inventor · disambiguated record
Michinari Sassa
Also filed as: SASSA MICHINARI
22 granted patents·3 pending applications·917 citations·filing 1992–2014
97Inventor score
Top patents by PatentIndex Score
25 records- 0198US7138286B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2005·Granted Nov 21, 2006·47 cites·2 claims
- 0291US5862167ALight-emitting semiconductor device using gallium nitride compoundTOYODA GOSEI KK·Filed 1997·Granted Jan 19, 1999·177 cites·5 claims
- 0389US5278433ALight-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layerTOYODA GOSEI KK·Filed 1992·Granted Jan 11, 1994·86 cites·19 claims
- 0487US6005258ALight-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impuritiesTOYODA GOSEI KK·Filed 1997·Granted Dec 21, 1999·69 cites·13 claims
- 0587US5627109AMethod of manufacturing a semiconductor device that uses a sapphire substrateFiled 1995·Granted May 6, 1997·71 cites·17 claims
- 0686US6362017B1Light-emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 2000·Granted Mar 26, 2002·44 cites·24 claims
- 0785US6265726B1Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensityTOYODA GOSEI KK·Filed 1999·Granted Jul 24, 2001·62 cites·9 claims
- 0885US5733796ALight-emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 1995·Granted Mar 31, 1998·77 cites·2 claims
- 0983US7867800B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2007·Granted Jan 11, 2011·5 cites·3 claims
- 1081US5652438ALight-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 1995·Granted Jul 29, 1997·68 cites·26 claims
- 1180US5753939ALight-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formedTOYODA GOSEI KK·Filed 1997·Granted May 19, 1998·80 cites·32 claims
- 1277US7332366B2Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2006·Granted Feb 19, 2008·3 cites·2 claims
- 1374US5650641ASemiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such deviceTOYODA GOSEI KK·Filed 1995·Granted Jul 22, 1997·56 cites·28 claims
- 1467US2014239313A1Light-emitting semiconductor device using group iii nitrogen compoundTOYODA GOSEI KK·Filed 2014·Application pending·0 cites
- 1562US5905276ALight emitting semiconductor device using nitrogen-Group III compoundAKASAKI ISAMU·Filed 1997·Granted May 18, 1999·34 cites·11 claims
- 1662US2012217510A1Light-emitting semiconductor device using group iii nitrogen compoundMANABE KATSUHIDE·Filed 2012·Application pending·0 cites
- 1761US6607595B1Method for producing a light-emitting semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Aug 19, 2003·8 cites·100 claims
- 1861US6472690B1Gallium nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Oct 29, 2002·7 cites·37 claims
- 1959US2011101412A1Light-emitting semiconductor device using group III nitrogen compoundTOYODA GOSEI KK·Filed 2011·Application pending·0 cites
- 2056US7001790B2Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensityTOYODA GOSEI KK·Filed 2001·Granted Feb 21, 2006·3 cites·3 claims
- 2155US6249012B1Light emitting semiconductor device using gallium nitride group compoundTOYODA GOSEI KK·Filed 1997·Granted Jun 19, 2001·13 cites·9 claims
- 2253US6984536B2Method for manufacturing a gallium nitride group compound semiconductorUNIV NAGOYA·Filed 2002·Granted Jan 10, 2006·4 cites·51 claims
- 2347US6830992B1Method for manufacturing a gallium nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Dec 14, 2004·1 cites·32 claims
- 2441US6472689B1Light emitting deviceTOYODA GOSEI KK·Filed 2000·Granted Oct 29, 2002·0 cites·37 claims
- 2534US6593599B1Light-emitting semiconductor device using gallium nitride group compoundJAPAN SCIENCE & TECH CORP·Filed 1999·Granted Jul 15, 2003·2 cites·41 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →