Inventor · disambiguated record
Mihel Seitz
Also filed as: SEITZ MIHEL
18 granted patents·3 pending applications·556 citations·filing 2000–2017
95Inventor score
Files withINFINEON TECHNOLOGIES AG12IBM4BOSCH GMBH ROBERT2INFINEON TECHNOLOGIES1INFINEON TECHNOLOGIES CORP1
Top patents by PatentIndex Score
21 records- 0198US6531377B2Method for high aspect ratio gap fill using sequential HDP-CVDINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 11, 2003·211 cites·23 claims
- 0295US6849496B2DRAM with vertical transistor and trench capacitor memory cells and method of fabricationINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 1, 2005·90 cites·4 claims
- 0389US6294423B1Method for forming and filling isolation trenchesINFINEON TECHNOLOGIES CORP·Filed 2000·Granted Sep 25, 2001·54 cites·22 claims
- 0488US6706634B1Control of separation between transfer gate and storage node in vertical DRAMINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 16, 2004·39 cites·14 claims
- 0584US6746933B1Pitcher-shaped active area for field effect transistor and method of forming sameIBM·Filed 2001·Granted Jun 8, 2004·35 cites·12 claims
- 0679US6383691B1Photomask and method for increasing image aspect ratio while relaxing mask fabrication requirementsINFINEON TECHNOLOGIES AG·Filed 2000·Granted May 7, 2002·17 cites·23 claims
- 0775US6509226B1Process for protecting array top oxideIBM·Filed 2000·Granted Jan 21, 2003·15 cites·3 claims
- 0872US6812092B2Method for fabricating transistors having damascene formed gate contacts and self-aligned borderless bit line contactsINFINEON TECHNOLOGIES·Filed 2000·Granted Nov 2, 2004·14 cites·18 claims
- 0969US6724054B1Self-aligned contact formation using double SiN spacersINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 20, 2004·16 cites·14 claims
- 1069US6667223B2High aspect ratio high density plasma (HDP) oxide gapfill method in a lines and space patternINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 23, 2003·17 cites·31 claims
- 1165US6621112B2DRAM with vertical transistor and trench capacitor memory cells and methods of fabricationINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 16, 2003·8 cites·5 claims
- 1263US6960514B2Pitcher-shaped active area for field effect transistor and method of forming sameIBM·Filed 2004·Granted Nov 1, 2005·9 cites·12 claims
- 1363US6319840B1For mol integrationIBM·Filed 2000·Granted Nov 20, 2001·12 cites·17 claims
- 1460US6716734B2Low temperature sidewall oxidation of W/WN/poly-gatestackINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 6, 2004·7 cites·5 claims
- 1553US6759292B2Method for fabricating a trench capacitorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 6, 2004·5 cites·17 claims
- 1651US7034352B2DRAM with very shallow trench isolationINFINEON TECHNOLOGIES AG·Filed 2004·Granted Apr 25, 2006·4 cites·15 claims
- 1748US6794282B2Three layer aluminum deposition process for high aspect ratio CL contactsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 21, 2004·3 cites·35 claims
- 1845US2009166318A1Method of Fabricating an Integrated CircuitSEITZ MIHEL·Filed 2007·Application pending·0 cites
- 1939US7105404B2Method for fabricating a semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 12, 2006·0 cites·8 claims
- 2039US2017205040A1Device and method for projecting a light patternBOSCH GMBH ROBERT·Filed 2017·Application pending·0 cites
- 2136US2018031201A1Illumination Device for a Vehicle, an Illumination Arrangement Comprising Two Illumination Devices, and a Method for Operating Said Illumination ArrangementBOSCH GMBH ROBERT·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →