Inventor · disambiguated record
Minsu Seol
Also filed as: SEOL MINSU
44 granted patents·50 pending applications·46 citations·filing 2015–2025
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD94
Top patents by PatentIndex Score
94 records- 0197US11588034B2Field effect transistor including gate insulating layer formed of two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 21, 2023·4 cites·26 claims
- 0296US10199958B2Triboelectric generatorSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 5, 2019·10 cites·39 claims
- 0394US10014799B2Triboelectric generatorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 3, 2018·5 cites·8 claims
- 0488US11563116B2Vertical type transistor, inverter including the same, and vertical type semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 24, 2023·1 cites·40 claims
- 0588US11532709B2Field effect transistor including channel formed of 2D materialSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 20, 2022·1 cites·17 claims
- 0687US12408399B2Semiconductor device including two-dimensional semiconductor materialSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 0786US10873277B2Triboelectric generatorSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 22, 2020·3 cites·18 claims
- 0885US10770990B2Triboelectric generatorSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 8, 2020·3 cites·15 claims
- 0984US10928723B2Pellicle for photomask, reticle including the same, and exposure apparatus for lithographySAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 23, 2021·2 cites·34 claims
- 1084US10551735B2Pellicle composition for photomask, pellicle for photomask formed from the pellicle composition, method of forming the pellicle, reticle including the pellicle, and exposure apparatus for lithography including the reticleSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 4, 2020·2 cites·29 claims
- 1182US10424490B2Hardmask composition, method of forming pattern using the hardmask composition, and hardmask formed from the hardmask compositionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 24, 2019·3 cites·26 claims
- 1280US12255244B2Field effect transistor including gate insulating layer formed of two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 1380US11404182B2Conductive composite structure for electronic device, method of preparing the same, electrode for electronic device including the conductive composite structure, and electronic device including the conductive composite structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 2, 2022·2 cites·13 claims
- 1480US11281092B2Pellicle for extreme ultraviolet lithography and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 22, 2022·1 cites·20 claims
- 1579US12062697B2Semiconductor device including two-dimensional semiconductor materialSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·14 claims
- 1679US10808142B2Method of preparing graphene quantum dot, hardmask composition including the graphene quantum dot obtained by the method, method of forming patterns using the hardmask composition, and hardmask formed from the hardmask compositionSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 20, 2020·2 cites·19 claims
- 1778US12142697B2Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·19 claims
- 1878US9905422B2Two-dimensional material hard mask, method of manufacturing the same, and method of forming material layer pattern using the hard maskSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 27, 2018·2 cites·8 claims
- 1978US2025338574A1Electronic device including two-dimensional material and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2077US12356668B2Field effect transistor including channels having a hollow closed cross-sectional structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·19 claims
- 2176US11086223B2Hardmask composition and method of forming pattern using the hardmask compositionSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 10, 2021·1 cites·5 claims
- 2275US2025185339A1Field effect transistor including gate insulating layer formed of two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2373US2025280590A1Electronic device including two-dimensional material and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2472US12087818B2Transistor including two-dimensional (2D) channelSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 2572US12027588B2Field effect transistor including channel formed of 2D materialSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·18 claims
- 2672US12002882B2Vertical type transistor, inverter including the same, and vertical type semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 4, 2024·0 cites·20 claims
- 2772US10777412B2Hardmask composition, method of preparing the same, and method of forming patterned layer by using the hardmask compositionSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 15, 2020·1 cites·27 claims
- 2872US10495972B2Hardmask composition and method of forming pattern using the hardmask compositionSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 3, 2019·1 cites·18 claims
- 2970US11508815B2Semiconductor device including two-dimensional semiconductor materialSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·15 claims
- 3070US10681464B2Acoustic diaphragm including graphene and acoustic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 9, 2020·1 cites·19 claims
- 3170US2025126864A1Black phosphorus-two dimensional material complex and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3269US11508814B2Transistor including two-dimensional (2D) channelSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·42 claims
- 3369US10685844B2Hardmask composition, method of forming pattern by using the hardmask composition, and hardmask formed using the hardmask compositionSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·1 cites·20 claims
- 3468US12402374B2Electronic device including two-dimensional material and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·18 claims
- 3567US12336259B2Electronic device including two-dimensional material and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·25 claims
- 3666US11463023B2Triboelectric generatorSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·16 claims
- 3764US11935790B2Field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·38 claims
- 3864US11431265B2Triboelectric generatorSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
- 3964US2025126885A1Semiconductor device, array structure including the semiconductor device, and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4063US11830952B2Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 28, 2023·0 cites·34 claims
- 4163US2025120130A1Semiconductor device including two-dimensional material and method of fabricating the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4263US2025220928A1Semiconductor device with power gating elementSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4362US2025142907A1Semiconductor device including vertical channel having tube shapeSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4461US12341063B2Interconnect structure, electronic device including the same, and method of manufacturing interconnect structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 24, 2025·0 cites·32 claims
- 4561US2025176258A1Semiconductor device including two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4661US2025176301A1Semiconductor device including vertically stacked semiconductor elements, method of manufacturing the same, and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4761US2025176226A1Semiconductor device including two-dimensional material and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4860US2025142896A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4960US2025022944A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 5059US12334357B2Method of forming material layerSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·20 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →