Inventor · disambiguated record
Mingyuan Song
Also filed as: Song Mingyuan
34 granted patents·15 pending applications·41 citations·filing 2018–2025
95Inventor score
Top patents by PatentIndex Score
49 records- 0198US11723218B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·4 cites·20 claims
- 0298US11289143B2SOT-MRAM with shared selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·11 cites·20 claims
- 0396US12022665B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0494US11430832B2Semiconductor MRAM device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·7 cites·20 claims
- 0594US11107975B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·4 cites·20 claims
- 0690US12356868B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 0790US11437434B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·2 cites·20 claims
- 0889US2025318438A1Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0988US10756255B2Semiconductor device with asymmetrical pinned magnets, and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·2 cites·17 claims
- 1086US12317513B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 1186US11984292B2Radiotherapy device and microwave source thereofSHANGHAI UNITED IMAGING HEALTHCARE CO LTD·Filed 2022·Granted May 14, 2024·1 cites·20 claims
- 1285US12495721B2Semiconductor device with asymmetrical pinned magnets, and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 1385US12322428B2SOT-MRAM with shared selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·19 claims
- 1484US12156479B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 26, 2024·1 cites·20 claims
- 1584US2025267877A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1683US12396372B2Semiconductor device and manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
- 1783US2025266070A1Sot-mram with shared selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1881US11195991B2Magnetic random access memory assisted devices and methods of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·1 cites·20 claims
- 1981US10879307B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·3 cites·20 claims
- 2081US2024381788A1Semiconductor Device and Manufacturing Method of Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2180US2024365685A1Methods of manufacturing spin-orbit-torque magnetic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2279US12114510B2SOT MRAM having dielectric interfacial layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 2379US12041855B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 2479US11594575B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 28, 2023·1 cites·19 claims
- 2579US11502241B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 15, 2022·2 cites·20 claims
- 2678US12412723B2Radiotherapy device and microwave source thereofSHANGHAI UNITED IMAGING HEALTHCARE CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 2778US2024381668A1Semiconductor MRAM Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2876US2023413683A1Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2976US2025357164A1Magnetic bonding structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3075US12225734B2Semiconductor MRAM device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 11, 2025·0 cites·20 claims
- 3175US12075711B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 3275US11778924B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 3373US11963366B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 3473US11793087B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 3573US11706999B2Semiconductor device and manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 3673US11699474B2SOT-MRAM with shared selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 11, 2023·0 cites·20 claims
- 3773US11678585B2Semiconductor device with asymmetrical pinned magnets, and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·17 claims
- 3873US11302864B2Semiconductor device with asymmetrical pinned magnets, and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·0 cites·20 claims
- 3972US12238937B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 4070US2024389472A1Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4168US11805705B2Strained ferromagnetic hall metal SOT layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 4268US2025372333A1Radiotherapy device and microwave source thereofSHANGHAI UNITED IMAGING HEALTHCARE CO LTD·Filed 2025·Application pending·0 cites
- 4368US2024412991A1Magnetic bonding structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4466US11239413B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 1, 2022·0 cites·20 claims
- 4564US11469267B2SOT MRAM having dielectric interfacial layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
- 4663US2025221317A1Mram device having two-terminal selectorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4753US2023282264A1Memory Arrays, Methods of Forming the Same, and Methods of Operating the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4851US2025384928A1Memory device, method of manufacturing, and method of operatingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4950US2023263074A1Memory Device Including Bottom Electrode Bridges and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →