Inventor · disambiguated record
Ming-Yuan Song
Also filed as: SONG MING-YUAN
21 granted patents·9 pending applications·23 citations·filing 2019–2025
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30
Top patents by PatentIndex Score
30 records- 0198US11968844B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·2 cites·20 claims
- 0298US11716859B2Memory device, semiconductor device, and method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·8 cites·20 claims
- 0397US11342015B1Memory device and memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·6 cites·20 claims
- 0492US11456100B2MRAM stacks, MRAM devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·2 cites·20 claims
- 0591US11145347B1Memory device and memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·3 cites·20 claims
- 0688US11765984B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·1 cites·20 claims
- 0787US12334238B2MRAM stacks, MRAM devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 0886US12324165B2Methods of writing and forming memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 0985US2024387090A1Mram stacks, mram devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1083US12356870B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1183US2025356897A1Circuit with logical function of computing-in-memory, memory device, and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1281US11862373B2MRAM stacks and memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·19 claims
- 1381US2025311641A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1480US2024090237A1Mram device having self-aligned shunting layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1579US12256555B2Memory device, semiconductor device, and method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 1677US12514128B2Magnetic memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 1777US11469371B2SOT-MRAM cell in high density applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·1 cites·20 claims
- 1876US12057153B2Memory device with tunable probabilistic stateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 1975US11903326B2SOT-MRAM cell in high density applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 2075US2024363154A1Memory device with tunable probabilistic stateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2175US2025194103A1Memory device, semiconductor device, and method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2275US2023076145A1Mram device having self-aligned shunting layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2368US11721376B2Memory device, operation method of memory device and operation method of memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·0 cites·20 claims
- 2468US11538858B2Memory device, method of forming the same, and memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 2567US12406711B2Circuit with logical function of computing-in- memory, memory device, and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
- 2663US11522009B2MRAM device having self-aligned shunting layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 6, 2022·0 cites·20 claims
- 2761US12256646B2Memory device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 18, 2025·0 cites·20 claims
- 2852US11521664B2Memory device with tunable probabilistic stateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·0 cites·20 claims
- 2952US2025127063A1Magnetoresistive memory device and integrated memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3046US2025364027A1Computing circuit, memory cell, and compute-in-memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →