Inventor · disambiguated record
Michael Stadtmueller
Also filed as: STADTMUELLER MICHAEL
14 granted patents·7 pending applications·23 citations·filing 2002–2025
88Inventor score
Files withINFINEON TECHNOLOGIES AG11INFINEON TECHNOLOGIES AUSTRIA AG4QIMONDA AG2INFINEON TECHNOLOGIES SC3001LEHNERT WOLFGANG1
Top patents by PatentIndex Score
21 records- 0184US2025380466A1Semiconductor device having a field plate electrode with an embedded strain-inducing materialINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 0281US11728427B2Power semiconductor device having a strain-inducing material embedded in an electrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Aug 15, 2023·1 cites·30 claims
- 0378US9825131B2Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donorsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 21, 2017·2 cites·17 claims
- 0475US2025279278A1Methods for forming Wide Band Gap Semiconductor Devices Using Different Reactive Gas SpeciesINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0574US10192955B2Semiconductor device containing oxygen-related thermal donorsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 29, 2019·1 cites·17 claims
- 0673US12471324B2Power semiconductor device having an electrode with an embedded materialINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Nov 11, 2025·0 cites·13 claims
- 0769US7718475B2Method for manufacturing an integrated circuit including a transistorQIMONDA AG·Filed 2007·Granted May 18, 2010·4 cites·24 claims
- 0868US12341012B2Method for annealing a gate insulation layer on a wide band gap semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jun 24, 2025·0 cites·23 claims
- 0968US8685828B2Method of forming a capacitorLEHNERT WOLFGANG·Filed 2011·Granted Apr 1, 2014·2 cites·24 claims
- 1067US9515162B2Surface treatment of semiconductor substrate using free radical state fluorine particlesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Dec 6, 2016·2 cites·14 claims
- 1161US6802712B2Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating systemINFINEON TECHNOLOGIES SC300·Filed 2003·Granted Oct 12, 2004·11 cites·11 claims
- 1258US11295951B2Wide band gap semiconductor device and method for forming a wide band gap semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 5, 2022·0 cites·13 claims
- 1355US9196675B2Capacitor and method of forming a capacitorINFINEON TECHNOLOGIES AG·Filed 2014·Granted Nov 24, 2015·0 cites·16 claims
- 1453US9881991B2Capacitor and method of forming a capacitorINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jan 30, 2018·0 cites·20 claims
- 1543US11127839B2Method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 21, 2021·0 cites·11 claims
- 1639US2007105262A1Method for fabricating an integrated circuit with a CMOS manufacturing processINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 1738US2007210367A1Storage capacitor and method for producing such a storage capacitorQIMONDA AG·Filed 2006·Application pending·0 cites
- 1837US2006275981A1Memory and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2006·Application pending·0 cites
- 1936US2005118336A1Method for the deposition of silicon nitrideFiled 2002·Application pending·0 cites
- 2035US7144770B2Memory cell and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2004·Granted Dec 5, 2006·0 cites·22 claims
- 2135US2008182344A1Method and system for determining deformations on a substrateMUELLER STEFFEN·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →