Inventor · disambiguated record
Michael F. Stumborg
Also filed as: STUMBORG MICHAEL · STUMBORG MICHAEL F
15 granted patents·477 citations·filing 1994–2001
94Inventor score
Top patents by PatentIndex Score
15 records- 0192US6188134B1Electronic devices with rubidium barrier film and process for making sameUS NAVY·Filed 1998·Granted Feb 13, 2001·120 cites·19 claims
- 0291US6291876B1Electronic devices with composite atomic barrier film and process for making sameUS NAVY·Filed 1998·Granted Sep 18, 2001·104 cites·17 claims
- 0386US6077775AProcess for making a semiconductor device with barrier film formation using a metal halide and products thereofUS NAVY·Filed 1998·Granted Jun 20, 2000·80 cites·16 claims
- 0480US6083818AElectronic devices with strontium barrier film and process for making sameUS NAVY·Filed 1998·Granted Jul 4, 2000·50 cites·20 claims
- 0573US5435264AProcess for forming epitaxial BaF2 on GaAsUS ARMY·Filed 1994·Granted Jul 25, 1995·23 cites·19 claims
- 0666US6306212B1Gallium arsenide semiconductor devices fabricated with insulator layerUS NAVY·Filed 2000·Granted Oct 23, 2001·9 cites·11 claims
- 0765US6566247B2Electronic devices with composite atomic barrier film and process for making sameUS NAVY·Filed 2001·Granted May 20, 2003·10 cites·9 claims
- 0864US6351036B1Electronic devices with a barrier film and process for making sameUS NAVY·Filed 1998·Granted Feb 26, 2002·29 cites·30 claims
- 0962US5690737AProcess for forming epitaxial BaF2 on GaAsUS ARMY·Filed 1995·Granted Nov 25, 1997·16 cites·32 claims
- 1053US6211066B1Electronic devices with barium barrier film and process for making sameUS NAVY·Filed 1999·Granted Apr 3, 2001·15 cites·16 claims
- 1146US6144050AElectronic devices with strontium barrier film and process for making sameUS NAVY·Filed 1998·Granted Nov 7, 2000·10 cites·16 claims
- 1237US6171953B1Processes for making electronic devices with rubidum barrier filmUS NAVY·Filed 1998·Granted Jan 9, 2001·5 cites·15 claims
- 1333US6720654B2Electronic devices with cesium barrier film and process for making sameUS NAVY·Filed 1998·Granted Apr 13, 2004·3 cites·14 claims
- 1433US6208001B1Gallium arsenide semiconductor devices fabricated with insulator layerUS NAVY·Filed 1998·Granted Mar 27, 2001·3 cites·16 claims
- 1530US6734558B2Electronic devices with barium barrier film and process for making sameUS NAVY·Filed 1998·Granted May 11, 2004·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →