Inventor · disambiguated record
Misao Takakusaki
Also filed as: TAKAKUSAKI MISAO
2 granted patents·3 pending applications·0 citations·filing 2004–2011
22Inventor score
Technology areasH10P
Top patents by PatentIndex Score
5 records- 0133US8137460B2Manufacturing method of GaN thin film template substrate, GaN thin film template substrate and GaN thick film single crystalMORIOKA SATORU·Filed 2007·Granted Mar 20, 2012·0 cites·9 claims
- 0232US2010101486A1Substrate for epitaxial growth and method for producing nitride compound semiconductor single crystalTAKAKUSAKI MISAO·Filed 2008·Application pending·0 cites
- 0329US2011244665A1MANUFACTURING METHOD OF GaN BASED SEMICONDUCTOR EPITAXIAL SUBSTRATEMIKAMI MAKOTO·Filed 2011·Application pending·0 cites
- 0425US2012256297A1Method for producing nitride compound semiconductor substrate, and nitride compound semiconductor free-standing substrateMORIOKA SATORU·Filed 2011·Application pending·0 cites
- 0514US8231728B2Epitaxial growth processTAKAKUSAKI MISAO·Filed 2004·Granted Jul 31, 2012·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →