Inventor · disambiguated record
Misaichi Takeuchi
Also filed as: TAKEUCHI MISAICHI
3 granted patents·2 pending applications·40 citations·filing 2000–2025
68Inventor score
Top patents by PatentIndex Score
5 records- 0182US6530991B2Method for the formation of semiconductor layerRIKEN·Filed 2000·Granted Mar 11, 2003·33 cites·4 claims
- 0275US9899565B2Method of manufacturing semiconductor substrate including separating two semiconductor layers from a growth substrateSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 20, 2018·2 cites·20 claims
- 0375US8698168B2Semiconductor device having aluminum nitride layer with void formed thereinUETA YOSHIHIRO·Filed 2011·Granted Apr 15, 2014·5 cites·6 claims
- 0463US2025176314A1Light-emitting device and method for manufacturing thereofXIAMEN SANAN OPTOELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0534US2016118533A1Method of manufacturing nanostructure semiconductor light emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →