Inventor · disambiguated record
Ming-Hsing Tsai
Also filed as: TSAI MING · TSAI MING-HSING
113 granted patents·55 pending applications·2,144 citations·filing 1996–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD114TAIWAN SEMICONDUCTOR MFG45SU HUNG-WEN2CHEN CHIEN-AN1KO TED1
Top patents by PatentIndex Score
168 records- 0199US7235482B2Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technologyTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 26, 2007·532 cites·23 claims
- 0298US9520362B2Semiconductor device having interconnect layer that includes dielectric segments interleaved with metal componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 13, 2016·38 cites·20 claims
- 0397US11232947B1Ammonium fluoride pre-clean protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·6 cites·20 claims
- 0497US7064068B2Method to improve planarity of electroplated copperTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jun 20, 2006·208 cites·24 claims
- 0596US9269612B2Mechanisms of forming damascene interconnect structuresCHEN CHIEN-AN·Filed 2012·Granted Feb 23, 2016·32 cites·20 claims
- 0695US11062941B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·3 cites·21 claims
- 0795US6406956B1Poly resistor structure for damascene metal gateTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 18, 2002·117 cites·19 claims
- 0894US10297453B2Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 21, 2019·11 cites·20 claims
- 0994US9947540B2Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 17, 2018·14 cites·20 claims
- 1093US10361120B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 23, 2019·8 cites·20 claims
- 1193US9978601B2Methods for pre-deposition treatment of a work-function metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 22, 2018·8 cites·20 claims
- 1292US10535748B2Method of forming a contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·6 cites·20 claims
- 1391US11929314B2Interconnect structures including a fin structure and a metal capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·2 cites·20 claims
- 1491US11373905B2Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·2 cites·20 claims
- 1591US9887072B2Systems and methods for integrated resputtering in a physical vapor deposition chamberTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 6, 2018·4 cites·20 claims
- 1691US7312531B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 25, 2007·22 cites·32 claims
- 1790US6399486B1Method of improved copper gap fillTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 4, 2002·116 cites·36 claims
- 1890US6224737B1Method for improvement of gap filling capability of electrochemical deposition of copperTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 1, 2001·112 cites·21 claims
- 1989US7354856B2Method for forming dual damascene structures with tapered via portions and improved performanceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 8, 2008·15 cites·11 claims
- 2089US6878615B2Method to solve via poisoning for porous low-k dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 12, 2005·49 cites·30 claims
- 2189US6319831B1Gap filling by two-step platingTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 20, 2001·69 cites·22 claims
- 2288US11552018B2Chemical direct pattern plating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 10, 2023·1 cites·20 claims
- 2387US9805968B2Vertical structure having an etch stop over portion of the sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 31, 2017·3 cites·20 claims
- 2487US6133144ASelf aligned dual damascene process and structure with low parasitic capacitanceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 17, 2000·91 cites·44 claims
- 2586US12417945B2Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·1 cites·20 claims
- 2686US2025357295A1Interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2785US12300542B2Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 2885US6274484B1Fabrication process for low resistivity tungsten layer with good adhesion to insulator layersTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 14, 2001·60 cites·8 claims
- 2985US2025287628A1Contact with a Silicide RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3084US12288716B2Phase control in contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 3184US10157785B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·3 cites·20 claims
- 3283US10475702B2Conductive feature formation and structure using bottom-up filling depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·2 cites·20 claims
- 3383US6489684B1Reduction of electromigration in dual damascene connectorTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 3, 2002·50 cites·18 claims
- 3483US6140241AMulti-step electrochemical copper deposition process with improved filling capabilityTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 31, 2000·72 cites·24 claims
- 3583US5668054AProcess for fabricating tantalum nitride diffusion barrier for copper matallizationUNITED MICROELECTRONICS CORP·Filed 1996·Granted Sep 16, 1997·77 cites·8 claims
- 3683US2025349616A1Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3783US2024379433A1Conductive feature formation and structure using bottom-up filling depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3883US2025293088A1Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3982US12148659B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·22 claims
- 4082US10867845B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·14 claims
- 4182US10580693B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 3, 2020·2 cites·20 claims
- 4282US7250683B2Method to solve via poisoning for porous low-k dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 31, 2007·9 cites·14 claims
- 4382US2025349605A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4481US7638859B2Interconnects with harmonized stress and methods for fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 29, 2009·10 cites·10 claims
- 4580US6420258B1Selective growth of copper for advanced metallizationTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 16, 2002·62 cites·33 claims
- 4680US2025259890A1Phase control in contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4780US2025359291A1Contact plugs with reduced r/c and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4880US2025063783A1Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4979US12328890B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 5079US11915976B2Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
Showing the top 50 of 168 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →