Inventor · disambiguated record
Ming-Jinn Tsai
Also filed as: TSAI MING JINN
20 granted patents·2 pending applications·337 citations·filing 1993–2017
95Inventor score
Files withIND TECH RES INST11GULA CONSULTING LLC3CHEN FREDERICK T2HIGGS OPL CAPITAL LLC2CHANG TING-CHANG1
Top patents by PatentIndex Score
22 records- 0194US7679163B2Phase-change memory elementIND TECH RES INST·Filed 2007·Granted Mar 16, 2010·28 cites·21 claims
- 0290US6396090B1Trench MOS device and termination structureIND TECH RES INST·Filed 2000·Granted May 28, 2002·73 cites·17 claims
- 0390US6309929B1Method of forming trench MOS device and termination structureIND TECHNOLOGY RES INST AND GE·Filed 2000·Granted Oct 30, 2001·115 cites·25 claims
- 0489US7964862B2Phase change memory devices and methods for manufacturing the sameIND TECH RES INST·Filed 2008·Granted Jun 21, 2011·21 cites·13 claims
- 0589US7919768B2Phase-change memory elementIND TECH RES INST·Filed 2008·Granted Apr 5, 2011·18 cites·10 claims
- 0686US9735352B2Phase change memory elementGULA CONSULTING LLC·Filed 2015·Granted Aug 15, 2017·3 cites·23 claims
- 0786US7660147B2Programming method for phase change memoryIND TECH RES INST·Filed 2007·Granted Feb 9, 2010·22 cites·20 claims
- 0885US8884260B2Phase change memory elementHIGGS OPL CAPITAL LLC·Filed 2013·Granted Nov 11, 2014·5 cites·17 claims
- 0984US9847479B2Phase change memory elementGULA CONSULTING LLC·Filed 2017·Granted Dec 19, 2017·2 cites·20 claims
- 1084US8604457B2Phase-change memory elementCHEN FREDERICK T·Filed 2008·Granted Dec 10, 2013·5 cites·39 claims
- 1179US7989795B2Phase change memory device and method for fabricating the samePROMOS TECHNOLOGIES INC·Filed 2007·Granted Aug 2, 2011·10 cites·40 claims
- 1278US10573807B2Phase change memory elementGULA CONSULTING LLC·Filed 2017·Granted Feb 25, 2020·1 cites·20 claims
- 1372US8198620B2Resistance switching memoryCHEN FREDERICK T·Filed 2009·Granted Jun 12, 2012·5 cites·19 claims
- 1469US8072018B2Semiconductor device and method for fabricating the sameCHEN WEI-SU·Filed 2007·Granted Dec 6, 2011·3 cites·14 claims
- 1563US7906774B2Phase change memory deviceIND TECH RES INST·Filed 2008·Granted Mar 15, 2011·2 cites·11 claims
- 1660US9245924B2Phase change memory elementHIGGS OPL CAPITAL LLC·Filed 2014·Granted Jan 26, 2016·0 cites·20 claims
- 1752US5376623AMethod to enhance critical temperature of thallium-based superconductorsIND TECH RES INST·Filed 1993·Granted Dec 27, 1994·15 cites·10 claims
- 1843US5981999APower trench DMOS with large active cell densityIND TECH RES INST·Filed 1999·Granted Nov 9, 1999·9 cites·14 claims
- 1941US7521305B2Method for fabricating semiconductor deviceIND TECH RES INST·Filed 2005·Granted Apr 21, 2009·0 cites·18 claims
- 2039US2013009124A1Resistive ram having the function of diode rectificationCHANG TING-CHANG·Filed 2011·Application pending·0 cites
- 2137US9899222B2Trench structure on SiC substrate and method for fabricating thereofIND TECH RES INST·Filed 2015·Granted Feb 20, 2018·0 cites·11 claims
- 2233US2011155992A1Phase-separation type phase-change memoryIND TECH RES INST·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →