Inventor · disambiguated record

Min-Ying Tsai

Also filed as: Tsai Min-Ying

28 granted patents·10 pending applications·52 citations·filing 2015–2025

94Inventor score

Technology areasH10W H10F H10P H01L H10D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD38

Top patents by PatentIndex Score

38 records

0196US11784204B2Enhanced trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 10, 2023·4 cites·20 claims
0295US10658410B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
0395US10395974B1Method for forming a thin semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 27, 2019·11 cites·20 claims
0494US11869761B2Back-side deep trench isolation structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 9, 2024·3 cites·20 claims
0593US11545513B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·2 cites·20 claims
0692US10163949B2Image device having multi-layered refractive layer on back surfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·6 cites·20 claims
0790US11817469B2Light absorbing layer to enhance P-type diffusion for DTI in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
0889US9754993B2Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 5, 2017·5 cites·20 claims
0986US2025318305A1Photodiode structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1086US2024387578A1Image sensor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1184US12364048B2Conductive contact for ion through-substrate viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
1284US2024387242A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1383US12364046B2Photodiode structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
1483US10163647B2Method for forming deep trench structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·3 cites·20 claims
1583US2025318312A1Conductive contact for ion through-substrate viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1683US2024363671A1Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1781US10971534B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 6, 2021·1 cites·20 claims
1881US10923503B2Semiconductor-on-insulator (SOI) substrate comprising a trap-rich layer with small grain sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 16, 2021·3 cites·20 claims
1981US2025331319A1Deep trench isolation structure and methods for fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2078US11398516B2Conductive contact for ion through-substrate viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 26, 2022·2 cites·20 claims
2178US2024379713A1Back-side deep trench isolation structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2276US12080738B2Image sensor having stacked metal oxide films as fixed charge filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
2375US12087801B2Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
2475US11929379B2Conductive contact for ion through-substrate viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·0 cites·20 claims
2574US12408448B2Deep trench isolation structure and methods for fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
2674US12191191B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
2773US10867834B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 15, 2020·1 cites·20 claims
2873US2024387614A1Metal-insulator-metal capacitor and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2972US12349492B2Photodiode structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 1, 2025·0 cites·20 claims
3071US11101307B2Image sensor having stacked conformal filmsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 24, 2021·0 cites·20 claims
3170US11069733B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 20, 2021·0 cites·20 claims
3269US12328886B2Metal-insulator-metal capacitor and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
3369US2022384496A1Back-side deep trench isolation structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
3467US2023411425A1Light absorbing layer to enhance p-type diffusion for dti in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3563US10930547B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 23, 2021·0 cites·20 claims
3658US11217621B2Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 4, 2022·0 cites·20 claims
3749US11171039B2Composite semiconductor substrate, semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 9, 2021·0 cites·20 claims
3846US11232975B2Semiconductor-on-insulator (SOI) substrate having dielectric structures that increase interface bonding strengthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 25, 2022·0 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →