Inventor · disambiguated record
Mikio Wakamiya
Also filed as: WAKAMIYA MIKIO
3 granted patents·2 pending applications·13 citations·filing 2000–2006
64Inventor score
Files withTOSHIBA KK5
Top patents by PatentIndex Score
5 records- 0161US6498365B1FET gate oxide layer with graded nitrogen concentrationTOSHIBA KK·Filed 2000·Granted Dec 24, 2002·10 cites·8 claims
- 0243US6607990B2Semiconductor device and its manufacturing methodTOSHIBA KK·Filed 2002·Granted Aug 19, 2003·2 cites·10 claims
- 0341US6905980B2Semiconductor device and method of manufacturing sameTOSHIBA KK·Filed 2003·Granted Jun 14, 2005·1 cites·14 claims
- 0440US2005179069A1Semiconductor device and method of manufacturing sameTOSHIBA KK·Filed 2005·Application pending·0 cites
- 0538US2006243978A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →