Inventor · disambiguated record
Ming-Tsong Wang
Also filed as: WANG MING · WANG MING-TSONG
28 granted patents·9 pending applications·182 citations·filing 1999–2024
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG17TAIWAN SEMICONDUCTOR MFG CO LTD14WANG MING-TSONG4E INK CALIFORNIA LLC1
Top patents by PatentIndex Score
37 records- 0193US10038026B2Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·7 cites·20 claims
- 0289US10622394B2Image sensing deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 14, 2020·5 cites·20 claims
- 0389US7579646B2Flash memory with deep quantum well and high-K dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 25, 2009·17 cites·13 claims
- 0485US7968967B2One-time-programmable anti-fuse formed using damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 28, 2011·13 cites·7 claims
- 0584US9299740B2Image sensor with low step height between back-side metal and pixel arrayTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 29, 2016·3 cites·17 claims
- 0684US2024162269A1Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0782US10074680B2Image sensor with low step height between back-side metal and pixel arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 11, 2018·3 cites·21 claims
- 0882US6687563B1Integration method of dispatch and schedule tools for 300 mm full automation FabTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 3, 2004·44 cites·34 claims
- 0981US8212233B2Forming phase-change memory using self-aligned contact/via schemeWANG MING-TSONG·Filed 2010·Granted Jul 3, 2012·6 cites·19 claims
- 1078US9536810B1Flat pad structure for integrating complementary metal-oxide-semiconductor (CMOS) image sensor processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·3 cites·20 claims
- 1177US11894410B2Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 1277US11244981B2Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 8, 2022·1 cites·20 claims
- 1376US6537919B1Process to remove micro-scratchesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 25, 2003·18 cites·26 claims
- 1473US6778879B2Automated material handling system and method of useTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 17, 2004·21 cites·25 claims
- 1571US8294197B2Program/erase schemes for floating gate memory cellsWANG MING-TSONG·Filed 2006·Granted Oct 23, 2012·5 cites·20 claims
- 1671US7966090B2Automated material handling system and methodTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 21, 2011·6 cites·21 claims
- 1770US8816422B2Multi-trapping layer flash memory cellWANG MING-TSONG·Filed 2006·Granted Aug 26, 2014·5 cites·20 claims
- 1869US11342373B2Manufacturing method of image sensing deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 1961US10515995B2Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·0 cites·20 claims
- 2061US2025280548A1Capacitor structure and method for fabricating the capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2161US2025380523A1Backside deep trench isolation with negative biasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2261US2006064190A1Method and system for dispatching semiconductor component during manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
- 2361US2025309095A1Capacitor structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2459US8735963B2Flash memory cells having leakage-inhibition layersWANG MING-TSONG·Filed 2008·Granted May 27, 2014·2 cites·11 claims
- 2556US6541370B1Composite microelectronic dielectric layer with inhibited crack susceptibilityTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 1, 2003·7 cites·17 claims
- 2655US2018271800A1Microcell systems for delivering active moleculesE INK CALIFORNIA LLC·Filed 2018·Application pending·0 cites
- 2754US6566263B1Method of forming an HDP CVD oxide layer over a metal line structure for high aspect ratio design ruleTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted May 20, 2003·8 cites·39 claims
- 2854US2024096784A1Extended via connect for pixel arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2948US6358851B1Sputter PM procedures with polish tool to effectively remove metal defects from target surface nodules (residue)TAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 19, 2002·1 cites·5 claims
- 3046US10304889B2Image sensor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·0 cites·20 claims
- 3142US7058469B2System and method for fully automatic manufacturing control in a furnace area of a semiconductor foundryTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jun 6, 2006·2 cites·20 claims
- 3241US7533373B2Method for prevention of system execution malfunctionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 12, 2009·0 cites·14 claims
- 3338US7316240B2Exhaust system and mini-exhaust static pressure controlling apparatus thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 8, 2008·0 cites·9 claims
- 3437US2005059233A1Process for forming metal damascene structure to prevent dielectric layer peelingFiled 2003·Application pending·0 cites
- 3537US2004098949A1Packaging method for wafersTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
- 3634US6660125B2Sputter PM procedures with polish tool to effectively remove metal defects from target surface nodules (residue)TAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 9, 2003·0 cites·5 claims
- 3728US6244936B1Method and device for reducing semiconductor defects caused by wafer clampingTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 12, 2001·5 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →