Inventor · disambiguated record
Ming-Yih Wang
Also filed as: WANG MING · WANG MING-YIH
39 granted patents·10 pending applications·304 citations·filing 2001–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD31YANGTZE MEMORY TECH CO LTD9CHENGDU ANALOG CIRCUIT TECH INC3PHOTONIFY TECHNOLOGIES INC2ASUSTEK COMP INC1
Top patents by PatentIndex Score
49 records- 0195US11199508B1Failure analysis method with improved detection accuracy for advanced technology nodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 14, 2021·5 cites·20 claims
- 0295US10950623B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Mar 16, 2021·9 cites·11 claims
- 0393US11404441B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 2, 2022·2 cites·10 claims
- 0489US11616002B2Through-circuit vias in interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·2 cites·20 claims
- 0588US12014997B2Dummy stacked structures surrounding TSVs and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·2 cites·20 claims
- 0688US2025024679A13d nand memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0787US11430811B23D NAND memory device with select gate cutYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 30, 2022·1 cites·14 claims
- 0886US12262539B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·19 claims
- 0986US11062782B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 13, 2021·2 cites·20 claims
- 1083US6516209B2Self-calibrating optical imaging systemPHOTONIFY TECHNOLOGIES INC·Filed 2001·Granted Feb 4, 2003·160 cites·50 claims
- 1182US10957664B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·3 cites·20 claims
- 1282US10707179B1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 7, 2020·3 cites·20 claims
- 1381US11825656B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 21, 2023·0 cites·13 claims
- 1481US11579191B2Method and system for testing an integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·1 cites·20 claims
- 1580US11094702B1One-time programmable memory device including anti-fuse element and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 17, 2021·1 cites·20 claims
- 1679US12293959B2Through-circuit Vias in interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
- 1779US2025357381A1Dummy stacked structures surrounding tsvs and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1878US12456696B2Dummy stacked structures surrounding TSVs and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
- 1978US11963347B2One-time programmable memory device including anti-fuse elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 16, 2024·0 cites·20 claims
- 2078US11361141B2Method and system for manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·1 cites·20 claims
- 2178US6735458B2Self-calibrating optical imaging systemPHOTONIFY TECHNOLOGIES INC·Filed 2002·Granted May 11, 2004·99 cites·15 claims
- 2278US2024387331A1Through-Circuit Vias In Interconnect StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2377US12007438B2Method and system for testing an integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 2477US9780106B2Two-transistor non-volatile memory cell and related program and read methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 3, 2017·3 cites·20 claims
- 2577US2024094288A1Circuit screening system and circuit screening methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2676US10726191B2Method and system for manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·2 cites·20 claims
- 2775US12243805B2Through-circuit vias in interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 2875US11852682B2Circuit screening system and circuit screening methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2975US8947938B2Two-transistor non-volatile memory cell and related program and read methodsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 3, 2015·4 cites·20 claims
- 3072US12131992B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 3172US11665890B2One-time programmable memory device including anti-fuse element and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 3271US12248022B2Method and apparatus for detecting defective logic devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 3370US10892023B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jan 12, 2021·2 cites·10 claims
- 3467US11500016B2Circuit screening system and circuit screening methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·19 claims
- 3565US11830832B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
- 3665US10600490B1Programming of memory cells in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 24, 2020·2 cites·20 claims
- 3765US2022300695A1Method and system for manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3863US11830806B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
- 3962US11309258B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·20 claims
- 4055US11675004B2Method and apparatus for detecting defective logic devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·20 claims
- 4154US2025036844A1Integrated circuit design method and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4251US2024274508A1Semiconductor structure with enhanced voltage stress control and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4350US10868185B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 4444US7428108B2Optical zoom lens module and electronic deviceASUSTEK COMP INC·Filed 2007·Granted Sep 23, 2008·0 cites·14 claims
- 4539US12336173B2Anti-fuse one-time programmable nonvolatile memory cell and memory thereofCHENGDU ANALOG CIRCUIT TECH INC·Filed 2021·Granted Jun 17, 2025·0 cites·6 claims
- 4638US10964391B2Programming circuit and programming method of flash memory and flash memoryCHENGDU ANALOG CIRCUIT TECH INC·Filed 2019·Granted Mar 30, 2021·0 cites·10 claims
- 4738US2002035317A1Optical imaging system with movable scanning unitPHOTONIFY TECHNOLOGIES·Filed 2001·Application pending·0 cites
- 4838US2002033454A1Optical imaging system with direct image constructionFiled 2001·Application pending·0 cites
- 4931US2019123057A1Novel non-volatile memory and method for manufacturing the sameCHENGDU ANALOG CIRCUIT TECH INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →