Inventor · disambiguated record
Min Yang
Also filed as: YANG MIN · YANG MIN-SHIH
76 granted patents·12 pending applications·2,204 citations·filing 2001–2016
99Inventor score
Top patents by PatentIndex Score
88 records- 0198US7459752B2Ultra thin body fully-depleted SOI MOSFETsIBM·Filed 2006·Granted Dec 2, 2008·283 cites·18 claims
- 0298US7250658B2Hybrid planar and FinFET CMOS devicesIBM·Filed 2005·Granted Jul 31, 2007·164 cites·6 claims
- 0397US8633067B2Fabricating photonics devices fully integrated into a CMOS manufacturing processASSEFA SOLOMON·Filed 2010·Granted Jan 21, 2014·50 cites·7 claims
- 0497US7605429B2Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancementIBM·Filed 2005·Granted Oct 20, 2009·127 cites·15 claims
- 0597US7329923B2High-performance CMOS devices on hybrid crystal oriented substratesIBM·Filed 2003·Granted Feb 12, 2008·138 cites·5 claims
- 0697US7023055B2CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bondingIBM·Filed 2003·Granted Apr 4, 2006·127 cites·18 claims
- 0797US6830962B1Self-aligned SOI with different crystal orientation using wafer bonding and SIMOX processesIBM·Filed 2003·Granted Dec 14, 2004·134 cites·17 claims
- 0896US7125785B2Mixed orientation and mixed material semiconductor-on-insulator waferIBM·Filed 2004·Granted Oct 24, 2006·102 cites·11 claims
- 0996US7087965B2Strained silicon CMOS on hybrid crystal orientationsIBM·Filed 2004·Granted Aug 8, 2006·97 cites·13 claims
- 1096US6815278B1Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientationsIBM·Filed 2003·Granted Nov 9, 2004·132 cites·17 claims
- 1195US6911383B2Hybrid planar and finFET CMOS devicesIBM·Filed 2003·Granted Jun 28, 2005·109 cites·11 claims
- 1295US6667528B2Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the sameIBM·Filed 2002·Granted Dec 23, 2003·91 cites·43 claims
- 1394US7291886B2Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETsIBM·Filed 2004·Granted Nov 6, 2007·73 cites·30 claims
- 1494US7098508B2Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientationsIBM·Filed 2004·Granted Aug 29, 2006·88 cites·7 claims
- 1592US7268377B2Structure and method of fabricating a hybrid substrate for high-performance hybrid-orientation silicon-on-insulator CMOS devicesIBM·Filed 2005·Granted Sep 11, 2007·22 cites·16 claims
- 1691US9306038B1Shallow extension junctionIBM·Filed 2014·Granted Apr 5, 2016·10 cites·12 claims
- 1791US9034748B2Process variability tolerant hard mask for replacement metal gate finFET devicesIBM·Filed 2013·Granted May 19, 2015·13 cites·10 claims
- 1891US6451702B1Methods for forming lateral trench optical detectorsIBM·Filed 2001·Granted Sep 17, 2002·68 cites·21 claims
- 1990US7791057B2Memory cell having a buried phase change region and method for fabricating the sameMACRONIX INT CO LTD·Filed 2008·Granted Sep 7, 2010·24 cites·19 claims
- 2088US7485506B2Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETSIBM·Filed 2007·Granted Feb 3, 2009·12 cites·1 claims
- 2188US7259049B2Self-aligned isolation double-gate FETIBM·Filed 2005·Granted Aug 21, 2007·11 cites·12 claims
- 2286US9023697B23D transistor channel mobility enhancementIBM·Filed 2013·Granted May 5, 2015·6 cites·15 claims
- 2386US7629233B2Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancementIBM·Filed 2007·Granted Dec 8, 2009·18 cites·12 claims
- 2485US9355887B2Dual trench isolation for CMOS with hybrid orientationsCHAN VICTOR·Filed 2012·Granted May 31, 2016·6 cites·11 claims
- 2585US9275907B23D transistor channel mobility enhancementIBM·Filed 2014·Granted Mar 1, 2016·5 cites·20 claims
- 2685US7091069B2Ultra thin body fully-depleted SOI MOSFETsIBM·Filed 2004·Granted Aug 15, 2006·32 cites·13 claims
- 2785US6946696B2Self-aligned isolation double-gate FETIBM·Filed 2002·Granted Sep 20, 2005·29 cites·18 claims
- 2885US6707075B1Method for fabricating avalanche trench photodetectorsIBM·Filed 2002·Granted Mar 16, 2004·39 cites·18 claims
- 2984US7220626B2Structure and method for manufacturing planar strained Si/SiGe substrate with multiple orientations and different stress levelsIBM·Filed 2005·Granted May 22, 2007·10 cites·16 claims
- 3083US8030634B2Memory array with diode driver and method for fabricating the sameMACRONIX INT CO LTD·Filed 2008·Granted Oct 4, 2011·8 cites·9 claims
- 3182US7402466B2Strained silicon CMOS on hybrid crystal orientationsIBM·Filed 2006·Granted Jul 22, 2008·8 cites·1 claims
- 3282US7364958B2CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bondingIBM·Filed 2006·Granted Apr 29, 2008·8 cites·37 claims
- 3381US7023057B2CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bondingIBM·Filed 2004·Granted Apr 4, 2006·24 cites·17 claims
- 3480US9006048B2Fabricating photonics devices fully integrated into a CMOS manufacturing processIBM·Filed 2013·Granted Apr 14, 2015·3 cites·19 claims
- 3579US9006049B2Fabricating photonics devices fully integrated into a CMOS manufacturing processIBM·Filed 2013·Granted Apr 14, 2015·3 cites·17 claims
- 3679US7385257B2Hybrid orientation SOI substrates, and method for forming the sameIBM·Filed 2006·Granted Jun 10, 2008·7 cites·7 claims
- 3777US9349650B2Low resistance and defect free epitaxial semiconductor material for providing merged FinFETsGLOBALFOUNDRIES INC·Filed 2014·Granted May 24, 2016·3 cites·16 claims
- 3877US7439542B2Hybrid orientation CMOS with partial insulation processIBM·Filed 2004·Granted Oct 21, 2008·22 cites·20 claims
- 3974US7713807B2High-performance CMOS SOI devices on hybrid crystal-oriented substratesIBM·Filed 2007·Granted May 11, 2010·5 cites·17 claims
- 4074US7449767B2Mixed orientation and mixed material semiconductor-on-insulator waferIBM·Filed 2006·Granted Nov 11, 2008·3 cites·1 claims
- 4174US7095006B2Photodetector with hetero-structure using lateral growthIBM·Filed 2003·Granted Aug 22, 2006·20 cites·13 claims
- 4273US7955958B2Method for fabrication of polycrystalline diodes for resistive memoriesIBM·Filed 2008·Granted Jun 7, 2011·3 cites·13 claims
- 4372US8445313B2Method for forming a self-aligned bit line for PCRAM and self-aligned etch back processBREITWISCH MATTHEW J·Filed 2012·Granted May 21, 2013·2 cites·17 claims
- 4471US7482216B2Substrate engineering for optimum CMOS device performanceIBM·Filed 2006·Granted Jan 27, 2009·4 cites·10 claims
- 4570US9293557B2Low temperature spacer for advanced semiconductor devicesIBM·Filed 2014·Granted Mar 22, 2016·2 cites·19 claims
- 4669US7148559B2Substrate engineering for optimum CMOS device performanceIBM·Filed 2003·Granted Dec 12, 2006·13 cites·7 claims
- 4767US9048261B2Fabrication of field-effect transistors with atomic layer dopingCHAN KEVIN K·Filed 2011·Granted Jun 2, 2015·1 cites·13 claims
- 4866US9349649B2Low resistance and defect free epitaxial semiconductor material for providing merged FinFETsGLOBALFOUNDRIES INC·Filed 2014·Granted May 24, 2016·1 cites·17 claims
- 4966US8273598B2Method for forming a self-aligned bit line for PCRAM and self-aligned etch back processBREITWISCH MATTHEW J·Filed 2011·Granted Sep 25, 2012·1 cites·20 claims
- 5066US8097516B2Dual trench isolation for CMOS with hybrid orientationsCHAN VICTOR·Filed 2008·Granted Jan 17, 2012·2 cites·6 claims
Showing the top 50 of 88 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →