Inventor · disambiguated record
Ming-Hsi Yeh
Also filed as: YEH MING-HSI
129 granted patents·40 pending applications·225 citations·filing 2002–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD146YEH MING-HSI8TAIWAN SEMICONDUCTOR MFG7IND TECH RES INST3TAIWAN SEMICONDUTOR MFG COMPANY LTD2
Top patents by PatentIndex Score
169 records- 0198US11404322B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·4 cites·20 claims
- 0297US11114436B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 7, 2021·4 cites·20 claims
- 0396US11972982B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·2 cites·20 claims
- 0496US11189714B2Gate stack structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·3 cites·20 claims
- 0596US9761684B2Method and structure for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·26 cites·20 claims
- 0695US11557512B2Wet cleaning with tunable metal recess for via plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 17, 2023·3 cites·20 claims
- 0795US9431304B2Method and structure for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 30, 2016·28 cites·20 claims
- 0894US10283503B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·8 cites·20 claims
- 0994US10283417B1Self-protective layer formed on high-k dielectric layers with different materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·10 cites·20 claims
- 1094US10170317B1Self-protective layer formed on high-k dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·7 cites·20 claims
- 1192US10811320B2Footing removal in cut-metal processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 20, 2020·6 cites·20 claims
- 1291US10490410B2Self-protective layer formed on high-K dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·4 cites·20 claims
- 1390US12046476B2Wet etching chemistry and method of forming semiconductor device using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 23, 2024·2 cites·20 claims
- 1489US10179878B2Wet etch chemistry for selective silicon etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 15, 2019·5 cites·20 claims
- 1589US2025364262A1Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1688US11488857B2Semiconductor device and method of manufacture using a contact etch stop layer (CESL) breakthrough processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·2 cites·20 claims
- 1788US8357574B2Method of fabricating epitaxial structuresTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 22, 2013·9 cites·20 claims
- 1887US11158726B2Controlling fin-thinning through feedbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·3 cites·20 claims
- 1987US10748898B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 18, 2020·3 cites·20 claims
- 2086US9461144B2Method for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 4, 2016·7 cites·20 claims
- 2186US8657963B2In-situ backside cleaning of semiconductor substrateYEH MING-HSI·Filed 2011·Granted Feb 25, 2014·8 cites·13 claims
- 2286US8541270B2Finlike structures and methods of making sameYEH MING-HSI·Filed 2011·Granted Sep 24, 2013·7 cites·20 claims
- 2386US2025364420A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2485US12469710B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 2585US12278288B2Fin field-effect transistor device having hybrid work function layer stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 2685US8735252B2Method of semiconductor integrated circuit fabricationYU WEIBO·Filed 2012·Granted May 27, 2014·9 cites·15 claims
- 2785US2025318176A1Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2885US2025300009A1Wet Cleaning with Tunable Metal Recess for Via PlugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2985US2025366051A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3084US12376372B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 3184US12376326B2Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 3284US12369348B2Fin Field-Effect Transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 3384US11854903B2Footing removal in cut-metal processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·1 cites·20 claims
- 3484US10361133B2High-K metal gate and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 23, 2019·3 cites·20 claims
- 3584US2025056823A1Controlling fin-thinning through feedbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3683US12176422B2Controlling fin-thinning through feedbackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 3783US11923428B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 5, 2024·0 cites·20 claims
- 3883US11488859B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 1, 2022·3 cites·20 claims
- 3983US11276571B2Method of breaking through etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 15, 2022·1 cites·20 claims
- 4083US8926762B2Apparatus and methods for movable megasonic wafer probeCHIEN YING-HSUEH CHANG·Filed 2011·Granted Jan 6, 2015·5 cites·20 claims
- 4183US8889502B2Finlike structures and methods of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 18, 2014·4 cites·20 claims
- 4283US8759173B2Finlike structures and methods of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 24, 2014·5 cites·20 claims
- 4383US2024203740A1Self-protective layer formed on high-k dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4483US2024371688A1Semiconductor device with doped region dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4582US2025336719A1Semiconductor device with doped region dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4681US12381081B2Method of breaking through etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 4781US12080556B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·16 claims
- 4881US12021145B2Fin field-effect transistor device having hybrid work function layer stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 4981US11424347B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·1 cites·20 claims
- 5081US8518634B2Cleaning process for semiconductor device fabricationYEH MING-HSI·Filed 2011·Granted Aug 27, 2013·5 cites·18 claims
Showing the top 50 of 169 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →