Inventor · disambiguated record
Minseok Yoo
Also filed as: YOO MINSEOK
8 granted patents·20 pending applications·0 citations·filing 2020–2025
72Inventor score
Files withSAMSUNG ELECTRONICS CO LTD28
Top patents by PatentIndex Score
28 records- 0178US12142697B2Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·19 claims
- 0278US2025338574A1Electronic device including two-dimensional material and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0377US12356668B2Field effect transistor including channels having a hollow closed cross-sectional structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·19 claims
- 0473US2025280590A1Electronic device including two-dimensional material and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0568US12402374B2Electronic device including two-dimensional material and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·18 claims
- 0667US12336259B2Electronic device including two-dimensional material and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·25 claims
- 0764US11935790B2Field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·38 claims
- 0863US11830952B2Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 28, 2023·0 cites·34 claims
- 0961US2025176258A1Semiconductor device including two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1060US2025022944A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1159US2025120150A1Thin film structure and method of manufacturing the thin film structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1258US2025107191A1Semiconductor device including noble metal two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1357US12191392B2Semiconductor device including two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 1457US2024178307A1Semiconductor device including multi-layer gate insulating layer and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1556US2024038845A1Layer structures including two-dimensional channel layer, methods of manufacturing the same, electronic devices including 2d channel layer, and electronic apparatuses including electronic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1656US2024170562A1Semiconductor device including two-dimensional material and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1756US2024021679A1Semiconductor device including two-dimensional material and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1855US2025028017A1Method and apparatus for positioning using optical signalSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1955US2024030294A1Semiconductor device including two-dimensional material and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2054US11961898B2Method of patterning two-dimensional material layer on substrate, and method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 16, 2024·0 cites·20 claims
- 2154US2023078018A1Layer structures including carbon-based material, methods of manufacturing the layer structures, electronic devices including the layer structures, and electronic apparatuses including the electronic devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2254US2024021676A1Semiconductor device and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2354US2024014303A1Semiconductor device including trench structure and method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2453US2024047528A1Semiconductor device including two-dimensional material and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2553US2024021683A1Semiconductor device including two-dimensional material and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2651US2023112883A1Two-dimensional material structure, semiconductor device including the two-dimensional material structure, and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2750US2023103876A1Field effect transistor, electronic apparatus including the same, and method of manufacturing the field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2849US2023036321A1Layer structures including configuration increasing operation characteristics, methods of manufacturing the same, electronic devices including layer structures, and electronic apparatuses including electronic devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →