Inventor · disambiguated record
Ming Zhu
Also filed as: ZHU MING · ZHU MING-WU
131 granted patents·4 pending applications·580 citations·filing 2004–2024
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD40TAIWAN SEMICONDUCTOR MFG29GLOBALFOUNDRIES SG PTE LTD17CHUANG HARRY HAK-LAY12CHUANG HAK-LAY8
Top patents by PatentIndex Score
135 records- 0198US8754470B1Vertical tunneling field-effect transistor cell and fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 17, 2014·52 cites·19 claims
- 0297US8586436B2Method of forming a variety of replacement gate types including replacement gate types on a hybrid semiconductor deviceNG JIN-AUN·Filed 2012·Granted Nov 19, 2013·50 cites·10 claims
- 0397US8557659B2Spacer structures of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Oct 15, 2013·23 cites·20 claims
- 0496US8183644B1Metal gate structure of a CMOS semiconductor deviceCHUANG HARRY HAK-LAY·Filed 2011·Granted May 22, 2012·27 cites·20 claims
- 0594US9508721B2Metal gate structure of a CMOS semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·8 cites·20 claims
- 0694US8742492B2Device with a vertical gate structureCHUANG HAK-LAY·Filed 2012·Granted Jun 3, 2014·19 cites·19 claims
- 0793US10109638B1Embedded non-volatile memory (NVM) on fully depleted silicon-on-insulator (FD-SOI) substrateGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Oct 23, 2018·10 cites·20 claims
- 0893US9583499B1Devices with embedded non-volatile memory and metal gates and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Feb 28, 2017·22 cites·20 claims
- 0993US8368127B2Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive currentGLOBALFOUNDRIES SG PTE LTD·Filed 2009·Granted Feb 5, 2013·23 cites·16 claims
- 1093US8304840B2Spacer structures of a semiconductor deviceTEO LEE-WEE·Filed 2010·Granted Nov 6, 2012·12 cites·20 claims
- 1191US9793394B1Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Oct 17, 2017·10 cites·20 claims
- 1291US8349678B2Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 8, 2013·13 cites·20 claims
- 1391US8304831B2Method and apparatus of forming a gateZHU MING·Filed 2010·Granted Nov 6, 2012·15 cites·20 claims
- 1490US8703595B2N/P boundary effect reduction for metal gate transistorsCHUANG HAK-LAY·Filed 2011·Granted Apr 22, 2014·9 cites·20 claims
- 1590US8450216B2Contact etch stop layers of a field effect transistorTEO LEE-WEE·Filed 2010·Granted May 28, 2013·8 cites·20 claims
- 1689US9780231B1Integrated circuits with flash memory and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Oct 3, 2017·6 cites·20 claims
- 1789US9595443B2Metal gate structure of a semiconductor deviceZHU MING·Filed 2011·Granted Mar 14, 2017·8 cites·20 claims
- 1889US9536977B2Vertical tunneling field-effect transistor cell and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 3, 2017·7 cites·20 claims
- 1989US9111780B2Structure and method for vertical tunneling field effect transistor with leveled source and drainTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 18, 2015·7 cites·20 claims
- 2089US8969949B2Structure and method for static random access memory device of vertical tunneling field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 3, 2015·10 cites·21 claims
- 2189US8614484B2High voltage device with partial silicon germanium epi source/drainTEO LEE-WEE·Filed 2009·Granted Dec 24, 2013·16 cites·20 claims
- 2288US9412841B2Method of fabricating a transistor using contact etch stop layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·4 cites·20 claims
- 2388US8835294B2Method for improving thermal stability of metal gateCHEW HAN-GUAN·Filed 2010·Granted Sep 16, 2014·10 cites·20 claims
- 2487US9865510B2Device and methods for high-K and metal gate slacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 9, 2018·4 cites·20 claims
- 2587US9219124B2Metal gate semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 22, 2015·7 cites·17 claims
- 2686US9825185B1Integrated circuits and methods for fabricating integrated circuits with non-volatile memory structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Nov 21, 2017·5 cites·20 claims
- 2786US8304842B2Interconnection structure for N/P metal gatesCHEW HAN-GUAN·Filed 2010·Granted Nov 6, 2012·7 cites·20 claims
- 2885US11101371B2Structure and method for vertical tunneling field effect transistor with leveled source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 24, 2021·2 cites·20 claims
- 2985US9806172B2Vertical tunneling field-effect transistor cell and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 31, 2017·3 cites·20 claims
- 3084US10177238B2High-K film apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 8, 2019·3 cites·20 claims
- 3184US9466714B2Vertical tunneling field-effect transistor cell with coaxially arranged gate contacts and drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 11, 2016·4 cites·20 claims
- 3284US9190484B2Vertical tunneling field-effect transistor cell and fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 17, 2015·6 cites·20 claims
- 3384US8981530B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 17, 2015·5 cites·19 claims
- 3484US2024178303A1Structure and method for vertical tunneling field effect transistor with leveled source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3583US10490654B2Vertical tunneling field-effect transistor cell and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·2 cites·20 claims
- 3683US10424652B2Vertical tunneling field-effect transistor cell and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 24, 2019·2 cites·20 claims
- 3783US9865716B2System and method for a vertical tunneling field-effect transistor cellCHUANG HARRY HAK-LAY·Filed 2012·Granted Jan 9, 2018·5 cites·20 claims
- 3883USRE45060ESpacer structures of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 5, 2014·4 cites·21 claims
- 3983US8598656B2Method and apparatus of forming ESD protection deviceZHU MING·Filed 2010·Granted Dec 3, 2013·6 cites·18 claims
- 4082US9853125B2Vertical tunneling field-effect transistor cell and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 26, 2017·3 cites·20 claims
- 4182US8753931B2Cost-effective gate replacement processZHU MING·Filed 2012·Granted Jun 17, 2014·5 cites·20 claims
- 4282US8525270B2Structures and methods to stop contact metal from extruding into replacement gatesTEO LEE-WEE·Filed 2010·Granted Sep 3, 2013·6 cites·20 claims
- 4381US10211336B2LDMOS transistor structures and integrated circuits including LDMOS transistor structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Feb 19, 2019·3 cites·20 claims
- 4481US10103253B2Structure and method for vertical tunneling field effect transistor with leveled source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 16, 2018·2 cites·20 claims
- 4581US9947528B2Structure and method for nFET with high k metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 17, 2018·4 cites·17 claims
- 4681US9219125B2Device and methods for high-k and metal gate stacksTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 22, 2015·4 cites·20 claims
- 4781US9006860B2Metal gate features of semiconductor dieCHUANG HARRY-HAK-LAY·Filed 2011·Granted Apr 14, 2015·4 cites·20 claims
- 4881US8981495B2Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 17, 2015·4 cites·20 claims
- 4981US8889501B2Methods for forming MOS devices with raised source/drain regionsCHUANG HARRY-HAK-LAY·Filed 2012·Granted Nov 18, 2014·6 cites·20 claims
- 5081US8883594B2Vertical tunneling field-effect transistor cell and fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 11, 2014·4 cites·20 claims
Showing the top 50 of 135 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Ming Zhu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →