Inventor · disambiguated record
Moshe Agam
Also filed as: AGAM MOSHE
22 granted patents·7 pending applications·82 citations·filing 2005–2023
93Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC19AGAM MOSHE5LATTICE SEMICONDUCTOR CORP3SEMICONDUCTOR COMPONENTS IND2
Top patents by PatentIndex Score
29 records- 0195US10026728B1Semiconductor device having biasing structure for self-isolating buried layer and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Jul 17, 2018·21 cites·20 claims
- 0292US9245952B2Method of forming a semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Jan 26, 2016·13 cites·14 claims
- 0387US10276556B2Semiconductor device having biasing structure for self-isolating buried layer and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Apr 30, 2019·4 cites·20 claims
- 0483US7405446B2Electrostatic protection systems and methodsLATTICE SEMICONDUCTOR CORP·Filed 2005·Granted Jul 29, 2008·15 cites·11 claims
- 0582US8530283B2Process for forming an electronic device including a nonvolatile memory structure having an antifuse componentAGAM MOSHE·Filed 2011·Granted Sep 10, 2013·6 cites·20 claims
- 0676US10224323B2Isolation structure for semiconductor device having self-biasing buried layer and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Mar 5, 2019·2 cites·20 claims
- 0775US10153213B2Process of forming an electronic device including a drift region, a sinker region and a resurf regionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Dec 11, 2018·3 cites·17 claims
- 0874US7466190B2Charge pump with four-well transistorsLATTICE SEMICONDUCTOR CORP·Filed 2006·Granted Dec 16, 2008·13 cites·2 claims
- 0967US9923092B2Method of forming a semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Mar 20, 2018·1 cites·13 claims
- 1067US9478607B2Electronic device including an isolation structureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Oct 25, 2016·2 cites·20 claims
- 1165US12125923B2High voltage diode on SOI substrate with trench-modified current pathSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Oct 22, 2024·0 cites·20 claims
- 1261US10818516B2Semiconductor device having biasing structure for self-isolating buried layer and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Oct 27, 2020·0 cites·20 claims
- 1361US8803282B2Electronic device including a nonvolatile memory structure having an antifuse componentAGAM MOSHE·Filed 2013·Granted Aug 12, 2014·1 cites·20 claims
- 1458US10971632B2High voltage diode on SOI substrate with trench-modified current pathSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Apr 6, 2021·0 cites·20 claims
- 1558US2021125879A1Split well implantation processes for cmos and peripheral devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Application pending·0 cites
- 1658US2021125878A1Split well implantation for cmos and peripheral devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Application pending·0 cites
- 1758US2020335636A1Process of Forming an Electronic Device Including a Junction Field-Effect Transistor Having a Gate Within a Well RegionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Application pending·0 cites
- 1855US10490549B2Isolation structure for semiconductor device having self-biasing buried layer and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Nov 26, 2019·0 cites·20 claims
- 1955US8724364B2Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the sameAGAM MOSHE·Filed 2011·Granted May 13, 2014·1 cites·18 claims
- 2053US11251263B2Electronic device including a semiconductor body or an isolation structure within a trenchSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Feb 15, 2022·0 cites·20 claims
- 2152US2019273169A1Electronic device including a junction field-effect transistor having a gate within a well region and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Application pending·0 cites
- 2251US2025006766A1Stacking Single-Photon Avalanche Diodes and High Voltage DevicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Application pending·0 cites
- 2350US10896954B2Electronic device including a drift regionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jan 19, 2021·0 cites·18 claims
- 2450US9048237B2Electronic device including a nonvolatile memory structure having an antifuse componentSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Jun 2, 2015·0 cites·20 claims
- 2546US10497780B2Circuit and an electronic device including a transistor and a component and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Dec 3, 2019·0 cites·20 claims
- 2643US11289570B2Semiconductor device having optimized drain termination and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Mar 29, 2022·0 cites·16 claims
- 2743US8741697B2Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the sameAGAM MOSHE·Filed 2011·Granted Jun 3, 2014·0 cites·10 claims
- 2839US2007200196A1Shallow trench isolation (STI) devices and processesLATTICE SEMICONDUCTOR CORP·Filed 2006·Application pending·0 cites
- 2930US2006202306A1Bipolar junction transistor with high betaAGAM MOSHE·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →