Inventor · disambiguated record
Mohammed Anjum
Also filed as: ANJUM MOHAMMED
19 granted patents·861 citations·filing 1991–1998
96Inventor score
Top patents by PatentIndex Score
19 records- 0193US5358894AOxidation enhancement in narrow masked field regions of a semiconductor waferMICRON TECHNOLOGY INC·Filed 1993·Granted Oct 25, 1994·114 cites·9 claims
- 0286US5633177AMethod for producing a semiconductor gate conductor having an impurity migration barrierADVANCED MICRO DEVICES INC·Filed 1993·Granted May 27, 1997·70 cites·15 claims
- 0386US5393676AMethod of fabricating semiconductor gate electrode with fluorine migration barrierADVANCED MICRO DEVICES INC·Filed 1993·Granted Feb 28, 1995·68 cites·13 claims
- 0485US5444024AMethod for low energy implantation of argon to control titanium silicide formationADVANCED MICRO DEVICES INC·Filed 1994·Granted Aug 22, 1995·61 cites·13 claims
- 0584US5593907ALarge tilt angle boron implant methodology for reducing subthreshold current in NMOS integrated circuit devicesADVANCED MICRO DEVICES INC·Filed 1995·Granted Jan 14, 1997·89 cites·3 claims
- 0683US5429972AMethod of fabricating a capacitor with a textured polysilicon interface and an enhanced dielectricADVANCED MICRO DEVICES INC·Filed 1994·Granted Jul 4, 1995·66 cites·15 claims
- 0781US6331458B1Active region implant methodology using indium to enhance short channel performance of a surface channel PMOS deviceADVANCED MICRO DEVICES INC·Filed 1995·Granted Dec 18, 2001·57 cites·7 claims
- 0881US5470794AMethod for forming a silicide using ion beam mixingADVANCED MICRO DEVICES INC·Filed 1994·Granted Nov 28, 1995·73 cites·16 claims
- 0980US5401674AGermanium implant for use with ultra-shallow junctionsADVANCED MICRO DEVICES INC·Filed 1994·Granted Mar 28, 1995·47 cites·14 claims
- 1077US5550084AIntegrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layerADVANCED MICRO DEVICES INC·Filed 1995·Granted Aug 27, 1996·42 cites·18 claims
- 1166US5360749AMethod of making semiconductor structure with germanium implant for reducing short channel effects and subthreshold current near the substrate surfaceADVANCED MICRO DEVICES INC·Filed 1993·Granted Nov 1, 1994·44 cites·14 claims
- 1265US5372951AMethod of making a semiconductor having selectively enhanced field oxide areasADVANCED MICRO DEVICES INC·Filed 1993·Granted Dec 13, 1994·32 cites·12 claims
- 1364US5108954AMethod of reducing contact resistance at silicide/active area interfaces and semiconductor devices produced according to the methodMICRON TECHNOLOGY INC·Filed 1991·Granted Apr 28, 1992·34 cites·33 claims
- 1454US5471293AMethod and device for determining defects within a crystallographic substrateADVANCED MICRO DEVICES INC·Filed 1994·Granted Nov 28, 1995·19 cites·16 claims
- 1550US5258637ASemiconductor devices produced according to a method which reduces contact resistance at silicide/active area interfacesMICRON TECHNOLOGY INC·Filed 1992·Granted Nov 2, 1993·20 cites·9 claims
- 1648US6482719B1Semiconductor field region implant methodologyADVANCED MICRO DEVICES INC·Filed 1995·Granted Nov 19, 2002·13 cites·15 claims
- 1746US5661335ASemicondutor having selectively enhanced field oxide areas and method for producing sameADVANCED MICRO DEVICES INC·Filed 1995·Granted Aug 26, 1997·11 cites·2 claims
- 1831US5965932AContamination free source for shallow low energy junction implants using implanted molecules containing titanium and boronMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 12, 1999·1 cites·10 claims
- 1930US5891791AContamination free source for shallow low energy junction implantsMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 6, 1999·0 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →