Inventor · disambiguated record
Mousumi Bhat
Also filed as: BHAT MOUSUMI
11 granted patents·1 pending application·534 citations·filing 1993–2005
92Inventor score
Top patents by PatentIndex Score
12 records- 0197US5349225AField effect transistor with a lightly doped drainTEXAS INSTRUMENTS INC·Filed 1993·Granted Sep 20, 1994·184 cites·35 claims
- 0294US6897118B1Method of multiple pulse laser annealing to activate ultra-shallow junctionsCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted May 24, 2005·105 cites·38 claims
- 0389US5557569ALow voltage flash EEPROM C-cell using fowler-nordheim tunnelingTEXAS INSTRUMENTS INC·Filed 1995·Granted Sep 17, 1996·90 cites·6 claims
- 0486US5515319ANon-volatile memory cell and level shifterTEXAS INSTRUMENTS INC·Filed 1993·Granted May 7, 1996·67 cites·17 claims
- 0570US6686633B1Semiconductor device, memory cell, and processes for forming themMOTOROLA INC·Filed 2000·Granted Feb 3, 2004·16 cites·20 claims
- 0664US6184073B1Process for forming a semiconductor device having an interconnect or conductive film electrically insulated from a conductive member or regionMOTOROLA INC·Filed 1997·Granted Feb 6, 2001·27 cites·14 claims
- 0762US7112499B2Dual step source/drain extension junction anneal to reduce the junction depth: multiple-pulse low energy laser anneal coupled with rapid thermal annealCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Sep 26, 2006·10 cites·24 claims
- 0852US6291888B1Contact structure and process for formationMOTOROLA INC·Filed 1999·Granted Sep 18, 2001·15 cites·22 claims
- 0951US7101746B2Method to lower work function of gate electrode through Ge implantationCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Sep 5, 2006·3 cites·18 claims
- 1051US6037246AMethod of making a contact structureMOTOROLA INC·Filed 1996·Granted Mar 14, 2000·15 cites·27 claims
- 1144US6872608B1Method to selectively form poly SiGe P type electrode and polysilicon N type electrode through planarizationCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Mar 29, 2005·2 cites·15 claims
- 1237US2006205138A1Method to selectively form SiGe P type electrode and polysilicon N type electrode through planarizationCHARTERED SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →