Inventor · disambiguated record
Mohamed Imam
Also filed as: IMAM MOHAMED · IMAM MOHAMED A
31 granted patents·13 pending applications·385 citations·filing 1994–2024
97Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG15SEMICONDUCTOR COMPONENTS IND15MICRON TECHNOLOGY INC7INT RECTIFIER CORP4INFINEON TECHNOLOGIES AMERICAS CORP2
Top patents by PatentIndex Score
44 records- 0193US9461034B2Composite group III-V and group IV transistor having a switched substrateINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Oct 4, 2016·10 cites·19 claims
- 0292US7208385B2LDMOS transistor with enhanced termination region for high breakdown voltage with on-resistanceSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Apr 24, 2007·20 cites·16 claims
- 0390US11575377B2Switching circuit, gate driver and method of operating a transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Feb 7, 2023·2 cites·19 claims
- 0488US6448625B1High voltage metal oxide device with enhanced well regionSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Sep 10, 2002·46 cites·15 claims
- 0587US9397089B2Group III-V HEMT having a selectably floating substrateINT RECTIFIER CORP·Filed 2015·Granted Jul 19, 2016·5 cites·20 claims
- 0686US6867083B2Method of forming a body contact of a transistor and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2003·Granted Mar 15, 2005·39 cites·19 claims
- 0783US11251294B2High voltage blocking III-V semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Feb 15, 2022·2 cites·7 claims
- 0882US6773997B2Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllabilitySEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Aug 10, 2004·33 cites·8 claims
- 0982US5767563AInductor formed at least partially in a substrateMICRON TECHNOLOGY INC·Filed 1995·Granted Jun 16, 1998·56 cites·15 claims
- 1077US6262468B1Inductor formed at least partially in a substrateMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 17, 2001·20 cites·28 claims
- 1177US6054750AInductor formed at least partially in a substrateMICRON TECHNOLOGY INC·Filed 1998·Granted Apr 25, 2000·41 cites·49 claims
- 1275US6492679B1Method for manufacturing a high voltage MOSFET device with reduced on-resistanceSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Dec 10, 2002·21 cites·4 claims
- 1374US6589845B1Method of forming a semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2002·Granted Jul 8, 2003·21 cites·7 claims
- 1473US11916068B2Type III-V semiconductor substrate with monolithically integrated capacitorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Feb 27, 2024·0 cites·13 claims
- 1568US5900764AEfficient Vccp supply with regulation for voltage controlMICRON TECHNOLOGY INC·Filed 1997·Granted May 4, 1999·23 cites·4 claims
- 1665US12471348B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Nov 11, 2025·0 cites·15 claims
- 1764US11545485B2Type III-V semiconductor substrate with monolithically integrated capacitorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jan 3, 2023·0 cites·13 claims
- 1864US2023139374A1Switching circuit, gate driver for a group iii nitride-based enhancement mode transistor device and method of operating the group iii nitride-based enhancement mode transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 1963US6919598B2LDMOS transistor with enhanced termination region for high breakdown voltage with low on-resistanceFiled 2003·Granted Jul 19, 2005·9 cites·17 claims
- 2062US10211329B2Charge trapping prevention III-Nitride transistorINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Feb 19, 2019·1 cites·18 claims
- 2162US2023207636A1High Voltage Blocking III-V Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 2260US11923448B2High voltage blocking III-V semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Mar 5, 2024·0 cites·13 claims
- 2360US6507058B1Low threshold compact MOS device with channel region formed by outdiffusion of two regions and method of making sameSEMICONDUCTOR COMPONENTS IND·Filed 2000·Granted Jan 14, 2003·7 cites·1 claims
- 2456US12349389B2Lateral III/V heterostructure field effect transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jul 1, 2025·0 cites·15 claims
- 2556US2024088138A1Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 2654US12040302B2Device package having a lateral power transistor with segmented chip padINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jul 16, 2024·0 cites·15 claims
- 2751US2025317139A1Transistor device having a capacitive voltage divider circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 2849US12408364B2Hole draining structure for suppression of hole accumulationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Sep 2, 2025·0 cites·5 claims
- 2949US2016005816A1Group III-V Transistor with Voltage Controlled SubstrateINT RECTIFIER CORP·Filed 2015·Application pending·0 cites
- 3049US2016005845A1Group III-V Transistor Utilizing a Substrate Having a Dielectrically-Filled RegionINT RECTIFIER CORP·Filed 2015·Application pending·0 cites
- 3149US2016005821A1Group III-V Lateral Transistor with Backside ContactINT RECTIFIER CORP·Filed 2015·Application pending·0 cites
- 3246US11588024B2High voltage blocking III-V semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Feb 21, 2023·0 cites·16 claims
- 3346US6555877B2NMOSFET with negative voltage capability formed in P-type substrate and method of making the sameSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Apr 29, 2003·2 cites·7 claims
- 3445US6492687B2Merged semiconductor device and methodSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Dec 10, 2002·4 cites·19 claims
- 3542US11862630B2Semiconductor device having a bidirectional switch and discharge circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jan 2, 2024·0 cites·22 claims
- 3641US5721506AEfficient Vccp supply with regulation for voltage controlMICRON TECHNOLOGY INC·Filed 1994·Granted Feb 24, 1998·9 cites·9 claims
- 3737US6111451AEfficient VCCP supply with regulation for voltage controlMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 29, 2000·5 cites·33 claims
- 3836US2002097128A1Electronic component and method of manufacturingSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 3936US2002098637A1High voltage laterally diffused metal oxide semiconductor with improved on resistance and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 4035US2004108544A1High voltage mosfet with laterally varying drain doping and methodSEMICONDUCTOR COMPONENTS IND·Filed 2002·Application pending·0 cites
- 4134US5739058AMethod to control threshold voltage by modifying implant dosage using variable aperture dopant implantsMICRON TECHNOLOGY INC·Filed 1995·Granted Apr 14, 1998·9 cites·11 claims
- 4233US2002125530A1High voltage metal oxide device with multiple p-regionsSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 4333US2002130361A1Semiconductor device with laterally varying p-top layersSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 4433US2002130360A1High voltage MOS device with no field oxide over the p-top regionSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →