Inventor · disambiguated record
Moriz Jelinek
Also filed as: JELINEK MORIZ
28 granted patents·7 pending applications·19 citations·filing 2014–2024
93Inventor score
Top patents by PatentIndex Score
35 records- 0187US9564495B2Semiconductor device with a semiconductor body containing hydrogen-related donorsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 7, 2017·4 cites·7 claims
- 0279US9972704B2Method for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 15, 2018·2 cites·16 claims
- 0378US10128328B2Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donorsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 13, 2018·2 cites·23 claims
- 0478US9825131B2Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donorsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 21, 2017·2 cites·17 claims
- 0577US11195695B2Ion implantation method, ion implantation apparatus and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 7, 2021·2 cites·13 claims
- 0675US10096677B2Methods for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 9, 2018·2 cites·19 claims
- 0774US12224317B2Vertical power semiconductor device and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2023·Granted Feb 11, 2025·0 cites·18 claims
- 0874US10529838B2Semiconductor device having a variable carbon concentrationINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 7, 2020·1 cites·20 claims
- 0974US10192955B2Semiconductor device containing oxygen-related thermal donorsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 29, 2019·1 cites·17 claims
- 1074US9312135B2Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defectsINFINEON TECHNOLOGIES AG·Filed 2014·Granted Apr 12, 2016·2 cites·16 claims
- 1172US12512321B2Method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Granted Dec 30, 2025·0 cites·17 claims
- 1270US2024145247A1Ion beam implantation method and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1369US10037887B2Method for implanting ions into a semiconductor substrate and an implantation systemINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 31, 2018·1 cites·16 claims
- 1466US12438002B2Semiconductor device including a field stop regionINFINEON TECHNOLOGIES AG·Filed 2022·Granted Oct 7, 2025·0 cites·24 claims
- 1562US11908694B2Ion beam implantation method and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 20, 2024·0 cites·20 claims
- 1662US11742384B2Vertical power semiconductor device including a field stop region having a plurality of impurity peaksINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 29, 2023·0 cites·14 claims
- 1758US12500086B2Method of manufacturing a metal silicide layer above a silicon carbide substrate, and semiconductor device comprising a metal silicide layerINFINEON TECHNOLOGIES AG·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 1858US10317338B2Method and assembly for determining the carbon content in siliconINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 11, 2019·0 cites·26 claims
- 1957US2023299147A1Method for producing a sic superjunction deviceINFINEON·Filed 2023·Application pending·0 cites
- 2054US11569392B2Power semiconductor diode including field stop regionINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 2154US2024194444A1Ion beam current measurement device and ion beam implantation systemINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 2253US12513921B2Semiconductor device including a field stop regionINFINEON TECHNOLOGIES AG·Filed 2022·Granted Dec 30, 2025·0 cites·19 claims
- 2353US11764063B2Silicon carbide device with compensation region and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2020·Granted Sep 19, 2023·0 cites·22 claims
- 2452US11552172B2Silicon carbide device with compensation layer and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·0 cites·13 claims
- 2551US2024154020A1Semiconductor device including active diode areaINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 2651US2023125859A1Method of manufacturing a semiconductor device including ion implantation and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 2750US12057316B2Semiconductor device fabricated using channeling implantINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 6, 2024·0 cites·23 claims
- 2849US11043384B2Method of manufacturing a semiconductor device by using ion beam techniqueINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 22, 2021·0 cites·20 claims
- 2948US11018252B2Power semiconductor transistorINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 25, 2021·0 cites·27 claims
- 3047US11264459B2Power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Mar 1, 2022·0 cites·16 claims
- 3144US9634086B2Method of manufacturing semiconductor devices using light ion implantation and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 25, 2017·0 cites·17 claims
- 3243US11127839B2Method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 21, 2021·0 cites·11 claims
- 3343US10622268B2Apparatus and method for ion implantationINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 14, 2020·0 cites·20 claims
- 3441US2019051488A1Ion Implantation Apparatus and Method of Manufacturing Semiconductor DevicesINFINEON TECHNOLOGIES AG·Filed 2018·Application pending·0 cites
- 3531US2016322198A1Ion Source for Metal Implantation and Methods ThereofINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →