Inventor · disambiguated record
Moaniss Zitouni
Also filed as: ZITOUNI MOANISS
30 granted patents·2 pending applications·145 citations·filing 2002–2024
96Inventor score
Files withFREESCALE SEMICONDUCTOR INC13NXP USA INC13ZITOUNI MOANISS4MICROCHIP TECH INC1MOTOROLA INC1
Top patents by PatentIndex Score
32 records- 0196US10103257B1Termination design for trench superjunction power MOSFETNXP USA INC·Filed 2017·Granted Oct 16, 2018·17 cites·12 claims
- 0294US9324800B1Bidirectional MOSFET with suppressed bipolar snapback and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Apr 26, 2016·13 cites·20 claims
- 0393US10811502B1Method of manufacture of super-junction power semiconductor deviceNXP USA INC·Filed 2019·Granted Oct 20, 2020·14 cites·19 claims
- 0490US9472662B2Bidirectional power transistor with shallow body trenchFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Oct 18, 2016·7 cites·19 claims
- 0588US9397213B2Trench gate FET with self-aligned source contactFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jul 19, 2016·9 cites·16 claims
- 0687US9680003B2Trench MOSFET shield poly contactFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jun 13, 2017·5 cites·14 claims
- 0786US10431678B2Termination design for trench superjunction power MOSFETNXP USA INC·Filed 2018·Granted Oct 1, 2019·4 cites·5 claims
- 0886US9515178B1Shielded trench semiconductor devices and related fabrication methodsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Dec 6, 2016·5 cites·20 claims
- 0985US9553184B2Edge termination for trench gate FETFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jan 24, 2017·8 cites·19 claims
- 1082US11329150B2Termination for trench field plate power MOSFETNXP USA INC·Filed 2020·Granted May 10, 2022·1 cites·18 claims
- 1181US9178027B1Bidirectional trench FET with gate-based resurfZITOUNI MOANISS·Filed 2014·Granted Nov 3, 2015·5 cites·20 claims
- 1278US10153357B1Superjunction power semiconductor device and method for formingNXP USA INC·Filed 2017·Granted Dec 11, 2018·3 cites·19 claims
- 1378US9362394B2Power device termination structures and methodsZITOUNI MOANISS·Filed 2014·Granted Jun 7, 2016·4 cites·20 claims
- 1477US7211477B2High voltage field effect device and methodFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 1, 2007·6 cites·6 claims
- 1577US6787858B2Carrier injection protection structureFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 7, 2004·25 cites·13 claims
- 1671US10074743B2Trench MOSFET shield poly contactNXP USA INC·Filed 2017·Granted Sep 11, 2018·1 cites·5 claims
- 1771US7700996B2Tunable antifuse elementsFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Apr 20, 2010·4 cites·18 claims
- 1870US7301187B2High voltage field effect device and methodFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Nov 27, 2007·4 cites·14 claims
- 1967US11631763B2Termination for trench field plate power MOSFETNXP USA INC·Filed 2022·Granted Apr 18, 2023·0 cites·18 claims
- 2066US10644146B1Vertical bi-directional switches and method for making sameNXP USA INC·Filed 2018·Granted May 5, 2020·1 cites·20 claims
- 2164US7892907B2CMOS latch-up immunityFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Feb 22, 2011·2 cites·4 claims
- 2263US11489072B2Mirror device structure for power MOSFET and method of manufactureNXP USA INC·Filed 2021·Granted Nov 1, 2022·0 cites·5 claims
- 2357US2025098235A1Semiconductor device and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 2456US11004970B2Mirror device structure for power MOSFET and method of manufactureNXP USA INC·Filed 2019·Granted May 11, 2021·0 cites·15 claims
- 2556US10672902B2Bidirectional power MOSFET structure with a cathode short structureNXP USA INC·Filed 2019·Granted Jun 2, 2020·0 cites·20 claims
- 2656US6828650B2Bipolar junction transistor structure with improved current gain characteristicsMOTOROLA INC·Filed 2002·Granted Dec 7, 2004·7 cites·28 claims
- 2751US12349436B2Termination ballast to suppress hotspot formation in trench field plate power MOSFETsNXP USA INC·Filed 2022·Granted Jul 1, 2025·0 cites·19 claims
- 2851US10297684B2Bidirectional power MOSFET structure with a cathode short structureNXP USA INC·Filed 2017·Granted May 21, 2019·0 cites·11 claims
- 2949US9419128B2Bidirectional trench FET with gate-based resurfZITOUNI MOANISS·Filed 2015·Granted Aug 16, 2016·0 cites·20 claims
- 3046US8963256B2CMOS device structuresZITOUNI MOANISS·Filed 2011·Granted Feb 24, 2015·0 cites·20 claims
- 3146US7528015B2Tunable antifuse element and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 5, 2009·0 cites·5 claims
- 3237US2011261500A1Back end of line metal-to-metal capacitor structures and related fabrication methodsFREESCALE SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →