Inventor · disambiguated record
Mrunal A. Khaderbad
Also filed as: KHADERBAD MRUNAL A · KHADERBAD MRUNAL ABHIJITH
57 granted patents·25 pending applications·55 citations·filing 2013–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD79TAIWAN SEMICONDUCTOR MFG2TAIWAN SEMICONDUCTOR MANUFACTORING CO LTD1
Top patents by PatentIndex Score
82 records- 0196US11476365B2Fin field effect transistor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·4 cites·20 claims
- 0295US10854716B2Semiconductor device with source/drain contact formed using bottom-up depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·8 cites·20 claims
- 0394US11450666B2Semiconductor devices including two-dimensional material and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·3 cites·20 claims
- 0493US11776960B2Gate structures for stacked semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
- 0593US11158539B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·6 cites·19 claims
- 0691US11004794B2Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·5 cites·20 claims
- 0790US11942358B2Low thermal budget dielectric for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·2 cites·20 claims
- 0890US11476333B2Dual channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·2 cites·20 claims
- 0989US12040328B2Semiconductor devices including two-dimensional material and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·4 cites·20 claims
- 1089US11227794B2Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
- 1187US12341013B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
- 1287US2025308987A1Semiconductor structure with material modification and low resistance plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1386US12166079B22D channel transistors with low contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 10, 2024·1 cites·20 claims
- 1486US12136570B2Graphene layer for low resistance contacts and damascene interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·1 cites·20 claims
- 1586US10998241B2Selective dual silicide formation using a maskless fabrication process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·3 cites·20 claims
- 1686US2025308901A1Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1786US2025359108A1Contact and via structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1885US12347725B2Semiconductor structure with material modification and low resistance plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 1985US12255249B2Inner spacer structures for gate-all-around field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 2085US11749682B2Selective dual silicide formation using a maskless fabrication process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
- 2185US10847413B2Method of forming contact plugs for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·3 cites·20 claims
- 2285US2025309119A1Partial Barrier Free Vias for Cobalt-Based Interconnects and Methods of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2384US12266688B2Semiconductor device with source/drain contact formed using bottom-up depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 2483US11404416B2Low resistance fill metal layer material as stressor in metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 2, 2022·2 cites·20 claims
- 2582US2025311280A1Contact interface engineering for reducing contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2681US12389674B2Low resistance fill metal layer material as stressor in metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 2781US12362281B2Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 2880US11804539B2Transistor isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
- 2980US2025203976A1Semiconductor device with source/drain contact formed using bottom-up depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3080US2025203992A1Inner spacer structures for gate-all-around field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3179US12328938B2Gate structures for stacked semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 3279US10515849B2Semiconductor device, interconnection structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·2 cites·20 claims
- 3379US2025275236A1Gate structures for stacked semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3479US2025357341A1Interconnect structures with conductive carbon layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3579US2025329617A1Contact plugs for semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3678US11018053B2Semiconductor structure with material modification and low resistance plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·1 cites·20 claims
- 3778US2024243009A1Self-aligned barrier for metal viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3877US12431412B2Contact plugs for semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 3976US12426291B2Contact and via structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 4076US12051592B2Method and structure for barrier-less plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
- 4175US11972974B2Self-aligned barrier for metal viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 4275US11362212B2Contact interface engineering for reducing contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 14, 2022·1 cites·20 claims
- 4375US2024387291A1Selective dual silicide formation using a maskless fabrication process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4475US2024395901A1Semiconductor device, and method for protecting low-k dielectric feature of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4575US2024387653A1Liner layer for backside contacts of seimiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4674US12266709B2Selective dual silicide formation using a maskless fabrication process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 4774US11923367B2Low resistance fill metal layer material as stressor in metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 4874US11854871B2Semiconductor structure with material modification and low resistance plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 4974US11715763B2Method of forming metal contact for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 1, 2023·0 cites·20 claims
- 5074US2024395889A1Graphene wrap-around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 82 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →